BDT61B datasheet, PDF - EEWORLD Datasheet

BDT61B: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size238KB，9 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BDT61B Overview

Transistor,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	4 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	50 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	10 MHz

This Material Copyrighted By Its Respective Manufacturer

	BDT61B	BDT61A	BDT61C
Description	Transistor,	Transistor,	Transistor,
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	4 A	4 A	4 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	750	750	750
JESD-609 code	e0	e0	e0
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	50 W	50 W	50 W
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	10 MHz	10 MHz	10 MHz

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