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DTC114YXV3T1G

Description
PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-89
CategoryDiscrete semiconductor    The transistor   
File Size98KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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DTC114YXV3T1G Overview

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-89

DTC114YXV3T1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin (Sn)
Transistor component materialsSILICON
DTC114EXV3T1 Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC−89 package which is designed for low power surface mount
applications.
http://onsemi.com
NPN SILICON
DIGITAL
TRANSISTORS
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Lead−Free Solder Plating (Pure Sn)
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
1
3
2
SC−89
CASE 463C
STYLE 1
MARKING DIAGRAM
3
xx D
1
2
xx = Specific Device Code
(See Marking Table on page 2)
D = Date Code
©
Semiconductor Components Industries, LLC, 2004
1
January, 2004 − Rev. 0
Publication Order Number:
DTC114EXV3T1/D

DTC114YXV3T1G Related Products

DTC114YXV3T1G DTC143TXV3T1G
Description PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-89 digital transistor 100ma 50v brt npn
Is it Rohs certified? conform to conform to
Maker ON Semiconductor ON Semiconductor
Reach Compliance Code compliant compliant
Maximum collector current (IC) 0.1 A 0.1 A
Minimum DC current gain (hFE) 80 160
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Transistor component materials SILICON SILICON
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