DTC114EXV3T1 Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC−89 package which is designed for low power surface mount
applications.
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NPN SILICON
DIGITAL
TRANSISTORS
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Lead−Free Solder Plating (Pure Sn)
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
1
3
2
SC−89
CASE 463C
STYLE 1
MARKING DIAGRAM
3
xx D
1
2
xx = Specific Device Code
(See Marking Table on page 2)
D = Date Code
©
Semiconductor Components Industries, LLC, 2004
1
January, 2004 − Rev. 0
Publication Order Number:
DTC114EXV3T1/D
DTC114EXV3T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
DTC114EXV3T1
DTC124EXV3T1
DTC144EXV3T1
DTC114YXV3T1
DTC114TXV3T1
DTC143TXV3T1
Marking
8A
8B
8C
8D
94
8F
R1 (K)
10
22
47
10
10
4.7
R2 (K)
10
22
47
47
∞
∞
Shipping†
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure,
BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0
×
1.0 Inch Pad.
Symbol
P
D
200
1.6
R
θJA
P
D
300
2.4
R
θJA
T
J
, T
stg
400
−55 to +150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Max
Unit
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2
DTC114EXV3T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
DTC114EXV3T1
DTC124EXV3T1
DTC144EXV3T1
DTC114YXV3T1
DTC114TXV3T1
DTC143TXV3T1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
−
−
nAdc
nAdc
mAdc
Collector−Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
DTC114EXV3T1
DTC124EXV3T1
DTC144EXV3T1
DTC114YXV3T1
DTC114TXV3T1
DTC143TXV3T1
h
FE
35
60
80
80
160
160
−
60
100
140
140
350
350
−
−
−
−
−
−
−
0.25
Vdc
Vdc
−
−
−
−
−
−
V
OH
4.9
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 1.0 mA) DTC143TXV3T1/DTC114TXV3T1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
DTC114EXV3T1
DTC124EXV3T1
DTC114YXV3T1
DTC114TXV3T1
DTC143TXV3T1
DTC144EXV3T1
V
CE(sat)
V
OL
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
DTC143TXV3T1
DTC114TXV3T1
Input Resistor
DTC114EXV3T1
DTC124EXV3T1
DTC144EXV3T1
DTC114YXV3T1
DTC114TXV3T1
DTC143TXV3T1
DTC114EXV3T1/DTC124EXV3T1/
DTC144EXV3T1
DTC114YXV3T1
DTC143TXV3T1/DTC114TXV3T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.8
0.17
−
10
22
47
10
10
4.7
1.0
0.21
−
13
28.6
61.1
13
13
6.1
1.2
0.25
−
kΩ
Resistor Ratio
R
1
/R
2
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
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3
DTC114EXV3T1 Series
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
0
−50
R
θJA
= 600°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
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4
DTC114EXV3T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EXV3T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= −25°C
25°C
0.1
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= 75°C
25°C
−25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. V
CE(sat)
versus I
C
Figure 4. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
1
0.1
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
2
1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
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