MBR30080CT datasheet, PDF - EEWORLD Datasheet

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MBR30080CT: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 80V V(RRM), Silicon, MODULE-2; CategoryDiscrete semiconductor diode; File Size874KB，2 Pages; ManufacturerDaco Semiconductor Co., Ltd.

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Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 80V V(RRM), Silicon, MODULE-2

MBR30080CT Parametric

Parameter Name	Attribute value
Maker	Daco Semiconductor Co., Ltd.
package instruction	R-XUFM-X2
Reach Compliance Code	unknown
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.84 V
JESD-30 code	R-XUFM-X2
Maximum non-repetitive peak forward current	2000 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	150 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	80 V
Maximum reverse current	1000 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	UNSPECIFIED
Terminal location	UPPER

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MBR 30020C T (R )

DACO SEMICONDUCTOR CO., LTD.

MBR 300100CT(R)

T HRU

SCHOTTKY DIODE MODULE TYPES 300A

Features

Types Up to

100V V

RRM

High Surge Capability

300Amp Recti er

20-100 Volts

TWIN TOWER

MBR30020CT(R)

MBR30030CT(R)

MBR30035CT(R)

MBR30040CT(R)

MBR30045CT(R)

MBR30060CT(R)

MBR30080CT(R)

Operating Temperature: -55 C to+150

Storage Temperatur: -55 C to +150

Maximum

Maximum DC

Maximum

Recurrent

Part Number Peak Reverse RMS Voltage

Blocking

Voltage

20V

30V

35V

40V

45V

60V

80V

100V

14V

21V

25V

28V

32V

42V

57V

70V

20V

30V

35V

40V

45V

60V

80V

100V

Maximum Ratings

A

R

B

Q

N

G

W

U

F

U

C

V

E

MBR300100CT(R)

LUG

Teminal

Anode 1

LUG

Teminal

Anode 2

LUG

Teminal

Cathode 1 Cathode 2

Electrical Characteristics

@

25

Average Forward

Current

(Per pkg)

Peak Forward Surge

Current

(Per leg)

Unless Otherwise Specified

300A

2000A

0.70V

0.75V

0.84V

I

F(AV)

I

FSM

V

F

TC =125

3

Baseplate

Common Cathode

Inches

Min

Max

3.630

0.800

0.650

0.141

0.490

BSC

1/4-20 UNC FULL

0.275

3.150

0.600

0.312

0.180

0.290

BSC

-----

0.370

0.195

3

8.3ms , half sine

DIM

Baseplate

R=Common Anode

Millimeters

Min

-----

17.78

-----

3.30

12.25

34.75

Max

92.40

20.32

16.51

3.60

12.45

BSC

Maximum

20V~45V

Instantaneous

Forward Voltage

50V~60V

(Per leg)

IFM

=150A; T

J

=25

A

B

C

-----

0.700

-----

0.130

0.482

1.368

80V~100V

Maximum

Instantaneous

Reverse Current At

Rated DC Blocking

Voltage

(Per leg)

Maximum Thermal

Resistance Junction

To Case

(Per leg)

I

R

1mA

TJ = 25

10 mA

TJ =100

50 mA

TJ =150

0.40

E

F

G

N

R jc

/W

Q

R

U

V

W

6.99

80.01

15.24

7.92

4.57

7.37

BSC

-----

9.40

4.95

NOTE :

(1)

Pulse Test: Pulse Width 300

μsec.

Duty Cycle

<

2%

www.dacosemi.com.tw

-1-

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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