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MASW-003102-13590G

Description
MASW-003102-13590G
CategoryWireless rf/communication    Radio frequency and microwave   
File Size147KB,7 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Environmental Compliance
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MASW-003102-13590G Overview

MASW-003102-13590G

MASW-003102-13590G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknow
Other featuresUSABLE TO 26 GHZ, HIGH ISOLATION
structureCOMPONENT
Maximum input power (CW)32.99 dBm
Maximum insertion loss1.9 dB
Maximum operating frequency18000 MHz
Minimum operating frequency2000 MHz
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
RF/Microwave Device TypesSP3T
Base Number Matches1
MASW-002102-13580
MASW-003102-13590
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Features







Broad Bandwidth Specified up to 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Rugged,
Fully Monolithic
Glass Encapsulate Construction
RoHS Compliant
M/A-COM Products
Rev. V3
MASW-002102-13580
Description
The MASW-002102-13580 and MASW-003102-13590
devices are SP2T and SP3T broad band switches with
integrated bias networks utilizing M/A-COM's HMIC
TM
(Heterolithic Microwave Integrated Circuit) process,
US Patent 5,268,310. This process allows the
incorporation of silicon pedestals that form series and
shunt diodes or vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation performance
with exceptional repeatability through low millimeter
frequencies. Large bond pads facilitate the use of low
inductance ribbon bonds, while gold backside
metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders
or electrically conductive silver epoxy.
MASW-003102-13590
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF Incident Power
Bias Current +25°C
Absolute Maximum
-65
o
C to +125
o
C
-65
o
C to +150
o
C
+175
o
C
50V
+33dBm C.W.
±20mA
Max. operating conditions for a combination
of RF power, D.C. bias and temperature:
+33dBm CW @ 15mA (per diode) @+85°C
Yellow areas denote wire bond pads
1
ADVANCED:
Data Sheets contain information regarding a product MA-COM Technical Solutions is
North America
Tel: 800.366.2266 / Fax: 978.366.2266
considering for development. Performance is based on target specifications, simulated results, and/
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product MA-COM Technical Solutions
Visit www.macom.com for additional data sheets and product information.
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
ment to produce in volume is not guaranteed.
product(s) or information contained herein without notice.

MASW-003102-13590G Related Products

MASW-003102-13590G MASW-002102-13580G
Description MASW-003102-13590G MASW-002102-13580G
Is it Rohs certified? conform to conform to
Reach Compliance Code unknow unknow
Other features USABLE TO 26 GHZ, HIGH ISOLATION USABLE TO 26 GHZ, HIGH ISOLATION
structure COMPONENT COMPONENT
Maximum input power (CW) 32.99 dBm 33.01 dBm
Maximum insertion loss 1.9 dB 1.8 dB
Maximum operating frequency 18000 MHz 18000 MHz
Minimum operating frequency 2000 MHz 2000 MHz
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C
RF/Microwave Device Types SP3T SPDT
Base Number Matches 1 1

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