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NDP6051L

Description
Power Field-Effect Transistor, 48A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size64KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

NDP6051L Overview

Power Field-Effect Transistor, 48A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

NDP6051L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)48 A
Maximum drain current (ID)48 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
November 1996
NDP6051L / NDB6051L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
48 A, 50 V. R
DS(ON)
= 0.023
@ V
GS
= 5 V
R
DS(ON)
= 0.018
@ V
GS
= 10 V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP6051L
50
50
±10
±20
48
120
100
0.67
-65 to 175
NDB6051L
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
P
D
Maximum Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
T
J
,T
STG
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
NDP6051L Rev.A

NDP6051L Related Products

NDP6051L NDB6051L
Description Power Field-Effect Transistor, 48A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 48A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 200 mJ 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V
Maximum drain current (Abs) (ID) 48 A 48 A
Maximum drain current (ID) 48 A 48 A
Maximum drain-source on-resistance 0.018 Ω 0.018 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 100 W 100 W
Maximum pulsed drain current (IDM) 120 A 120 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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