BSC059N03SGXT datasheet, PDF - EEWORLD Datasheet

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BSC059N03SGXT: DescriptionPower Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8; CategoryDiscrete semiconductor The transistor; File Size632KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSC059N03SGXT Overview

Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

BSC059N03SGXT Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	17.5 A
Maximum drain-source on-resistance	0.0086 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSC059N03SGXT Related Products

	BSC059N03SGXT	BSC059N03S G	BSC059N03SGAUMA1
Description	Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8	mosfet N-CH 30v 73a tdson-8	Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Maker	Infineon	-	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F8	-	SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code	unknown	-	unknown
ECCN code	EAR99	-	EAR99
Other features	LOGIC LEVEL COMPATIBLE	-	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	150 mJ	-	150 mJ
Shell connection	DRAIN	-	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	-	30 V
Maximum drain current (ID)	17.5 A	-	17.5 A
Maximum drain-source on-resistance	0.0086 Ω	-	0.0086 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F8	-	R-PDSO-F8
Number of components	1	-	1
Number of terminals	8	-	8
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A	-	200 A
surface mount	YES	-	YES
Terminal form	FLAT	-	FLAT
Terminal location	DUAL	-	DUAL
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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