BSC059N03SGAUMA1 datasheet, PDF

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BSC059N03SGAUMA1: DescriptionPower Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8; CategoryDiscrete semiconductor The transistor; File Size632KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSC059N03SGAUMA1 Overview

Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

BSC059N03SGAUMA1 Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	17.5 A
Maximum drain-source on-resistance	0.0086 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSC059N03SGAUMA1 Related Products

	BSC059N03SGAUMA1	BSC059N03S G	BSC059N03SGXT
Description	Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8	mosfet N-CH 30v 73a tdson-8	Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Maker	Infineon	-	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F8	-	SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code	unknown	-	unknown
ECCN code	EAR99	-	EAR99
Other features	LOGIC LEVEL COMPATIBLE	-	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	150 mJ	-	150 mJ
Shell connection	DRAIN	-	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	-	30 V
Maximum drain current (ID)	17.5 A	-	17.5 A
Maximum drain-source on-resistance	0.0086 Ω	-	0.0086 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F8	-	R-PDSO-F8
Number of components	1	-	1
Number of terminals	8	-	8
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A	-	200 A
surface mount	YES	-	YES
Terminal form	FLAT	-	FLAT
Terminal location	DUAL	-	DUAL
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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