BSX52B datasheet, PDF - EEWORLD Datasheet

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BSX52B: DescriptionSmall Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18; CategoryDiscrete semiconductor The transistor; File Size50KB，1 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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BSX52B Overview

Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18

BSX52B Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
Reach Compliance Code	unknown
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	180
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Maximum off time (toff)	250 ns

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^zmi-donductoi ^Pioaucti, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U S.A.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

general purpose, amplification, switching - metal case

MoxintMfn

rating*

Charactvrittici at 25 *C

Typ.i

NPN

PNP

P»o.

omb

VCEO

min

^2ie

max

' 'c

VCE (»t) /

max

IC«B

min

(MHz)

250

300

200

150

ISO

150

ISO

150

22b

IKHi

max

<«)

'oH

Co»»

25*C

max

|mW)

2N930

2221

2221 A

2222

2222 A

300

500

400

360

300

*(V)

100

180

300

120

300

120

300

500

225

540

225

540

(mA)

(V)

(mA)

10/ 0,5

(nF)

i")

0,01

150

0,01

1,6

0,35

0,3

0,5

2N 2484

BSX51

BSX51 A

BSX51 B

BSX52

BSX52A

BSX 52 B

2906

2906 A

2907

2907 A

500/50

I/ 0,1

SO/ 3

SOI

50/ 3

SO/ 3

50/ 3

285

175

200

c *

250 §

250 |

250 §

TO 18

BSW21

BSW 21 A

BSW22

BSW 22 A

TO-18

VI .Semi-Conductors reserves the right to change test conditions, parameter limits nnd package dimensions without notice

Information furnished by NJ Semi-Conductors it believed to be both accurate nntl reliable .it the lime of going to press. However VI

imJutMrs ,h>Mimcs no responsibility for nn> errors or omjisiuiis Jiicuvcred in its ii.se M Semi-Ci.iiidiit.il/rs

• piicrs tn vcrif\i il:ita:;h«l3 .ire current before plncina I

BSX52B Related Products

	BSX52B	BSW21A	BSX52	BSX52A	BSW21	BSX51	BSX51A
Description	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Trans GP BJT NPN 25V 0.2A 3-Pin TO-18	Trans GP BJT NPN 50V 0.2A 3-Pin TO-18	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Trans GP BJT NPN 45V 1A 3-Pin TO-39	Trans GP BJT NPN 45V 1A 3-Pin TO-39
Maker	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Collector-emitter maximum voltage	60 V	50 V	25 V	50 V	25 V	25 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	180	75	180	180	75	75	75
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	PNP	NPN	NPN	PNP	NPN	NPN
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
Maximum off time (toff)	250 ns	-	250 ns	250 ns	-	250 ns	250 ns
Maximum collector current (IC)	-	-	0.2 A	0.2 A	-	1 A	1 A

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