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BSX51A

Description
Trans GP BJT NPN 45V 1A 3-Pin TO-39
CategoryDiscrete semiconductor    The transistor   
File Size50KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

BSX51A Overview

Trans GP BJT NPN 45V 1A 3-Pin TO-39

BSX51A Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Maximum off time (toff)250 ns
^zmi-donductoi ^Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
general purpose, amplification, switching - metal case
MoxintMfn
rating*
Charactvrittici at 25 *C
Typ.i
NPN
PNP
P»o.
T
omb
VCEO
min
^2ie
max
' 'c
VCE (»t) /
max
IC«B
*r
min
(MHz)
30
250
250
250
300
200
200
200
200
60
150
150
150
150
ISO
150
ISO
150
150
150
C
22b
FB
IKHi
max
<«)
'oH
Co»»
25*C
max
max
|mW)
2N930
2N
2N
2N
2N
2221
2221 A
2222
2222 A
300
500
500
500
500
400
400
400
400
360
300
300
300
300
300
300
300
300
300
300
*(V)
45
30
40
30
40
40
60
40
60
60
25
50
60
25
50
60
25
50
25
50
100
40
40
100
100
40
40
100
100
100
75
75
75
180
180
180
75
75
180
180
300
120
120
300
300
120
120
300
300
500
225
225
225
540
540
540
225
225
540
540
(mA)
(V)
1
(mA)
10/ 0,5
(nF)
i")
0,01
150
150
150
150
150
150
150
150
0,01
2
2
2
2
2
2
2
2
2
2
8
8
8
8
8
8
8
8
8
6
8
8
8
8
8
8
8
8
8
8
3
,6
.6
,6
,6
,6
1,6
0,35
0,3
0,3
0,3
0,3
0,3
0,3
0,5
0,5
0,5
0,5
2N
2N
2N
2N
2N 2484
BSX51
BSX51 A
BSX51 B
BSX52
BSX52A
BSX 52 B
2906
2906 A
2907
2907 A
500/50
500/50
500/50
500/50
500/50
500/50
500/50
500/50
I/ 0,1
SO/ 3
SOI
3
50/ 3
50/ 3
50/ 3
50/ 3
SO/ 3
SO/ 3
50/ 3
50/ 3
285
285
175
175
200
200
3
c *
250 §
250 §
250 |
250 §
250 §
250 §
TO 18
BSW21
BSW 21 A
BSW22
BSW 22 A
TO-18
VI .Semi-Conductors reserves the right to change test conditions, parameter limits nnd package dimensions without notice
Information furnished by NJ Semi-Conductors it believed to be both accurate nntl reliable .it the lime of going to press. However VI
imJutMrs ,h>Mimcs no responsibility for nn> errors or omjisiuiis Jiicuvcred in its ii.se M Semi-Ci.iiidiit.il/rs
• piicrs tn vcrif\i il:ita:;h«l3 .ire current before plncina I

BSX51A Related Products

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Description Trans GP BJT NPN 45V 1A 3-Pin TO-39 Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 Trans GP BJT NPN 25V 0.2A 3-Pin TO-18 Trans GP BJT NPN 50V 0.2A 3-Pin TO-18 Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 Trans GP BJT NPN 45V 1A 3-Pin TO-39
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
Collector-emitter maximum voltage 50 V 50 V 25 V 50 V 60 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 75 75 180 180 180 75 75
JEDEC-95 code TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Package body material METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN PNP NPN NPN NPN PNP NPN
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Maximum collector current (IC) 1 A - 0.2 A 0.2 A - - 1 A
Maximum off time (toff) 250 ns - 250 ns 250 ns 250 ns - 250 ns
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