Trans GP BJT NPN 45V 1A 3-Pin TO-39
| Parameter Name | Attribute value |
| Maker | New Jersey Semiconductor |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 75 |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| Maximum off time (toff) | 250 ns |

| BSX51A | BSW21A | BSX52 | BSX52A | BSX52B | BSW21 | BSX51 | |
|---|---|---|---|---|---|---|---|
| Description | Trans GP BJT NPN 45V 1A 3-Pin TO-39 | Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | Trans GP BJT NPN 25V 0.2A 3-Pin TO-18 | Trans GP BJT NPN 50V 0.2A 3-Pin TO-18 | Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | Trans GP BJT NPN 45V 1A 3-Pin TO-39 |
| Maker | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor | New Jersey Semiconductor |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Collector-emitter maximum voltage | 50 V | 50 V | 25 V | 50 V | 60 V | 25 V | 25 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 75 | 75 | 180 | 180 | 180 | 75 | 75 |
| JEDEC-95 code | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | PNP | NPN | NPN | NPN | PNP | NPN |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz |
| Maximum collector current (IC) | 1 A | - | 0.2 A | 0.2 A | - | - | 1 A |
| Maximum off time (toff) | 250 ns | - | 250 ns | 250 ns | 250 ns | - | 250 ns |