RN1961TE85N datasheet, PDF - EEWORLD Datasheet

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RN1961TE85N: DescriptionTRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size463KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1961TE85N Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN1961TE85N Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V

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RN1961~RN1966

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1961,RN1962,RN1963

RN1964,RN1965,RN1966

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in US6 (ultra super mini type 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2961 to RN2966

Equivalent Circuit and Bias Resistor Values

Type No.

RN1961

RN1962

RN1963

RN1964

RN1965

RN1966

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1961 to 1966

RN1961 to 1964

RN1965, 1966

Symbol

CBO

CEO

EBO

stg

Rating

100

200

150

−55

to150

JEDEC

―

JEITA

―

TOSHIBA

2-2J1B

Weight: 6.8 mg (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Equivalent Circuit (Top View)

2010-05-20

RN1961TE85N Related Products

	RN1961TE85N	RN1961-71	RN1961TE85L	RN1961(TE85R)	RN1961TE85R	RN1961(TE85L)
Description	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTORS	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	-	SMALL OUTLINE, R-PDSO-G6
ECCN code	EAR99	EAR99	-	EAR99	-	EAR99
Minimum DC current gain (hFE)	30	-	30	30	30	30
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Nominal transition frequency (fT)	250 MHz	-	250 MHz	250 MHz	250 MHz	250 MHz
Base Number Matches	-	1	1	1	1	1

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