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FTZA64

Description
Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size335KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FTZA64 Overview

Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

FTZA64 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10000
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
SOT223 PNP SILICON PLANAR
DARLINGTON
TRANSISTORS
0
ISSUE 4- MARCH 1996
m
I
i
4
3
3
I
1
PARTMARKING
DETAILS:
FULL
DE\’lCE
TYPE
COMPLIMENTARY
TYPES:
FZTA63
= FZTAI
FZTA64=FZTA14
*
2
1
ABSOLUTE MAXIMUM
PARAMETER
Collector-Base
Collector-Emitter
Em;;ter-Base
Voltage
Voltage
_—. -
Voltage
RATINGS.
SYMBOL
‘cao
‘CEO
Lid
.—
–.
VALUE
____j_
UNIT
——
.—.&..———.
.30
-lo
-800
_2G-—
- ‘
v
v
v
mA
..-—–
vEao
—.—
‘CM
.—
Ic
Peak Pulse Current
——— .—. .—
—.—
Continuous
Collector
Current
—-—.
Paak Base Current
-500
-:-
IBM
P
tot
Range
Ti:l$tg
‘-
2
-55 to +150
mA
~-——-–—.-
mA
w
‘c
.——.
Pow; r Dissipation
at Tamb=25°C
———
Operating
and Storaga
Temperature
ELECTRICAL CHARACTERISTICS {at Tamb = 25°C unless otherwise stated).
PARAMETER
. .—.
Collector
Base
Voltage
SYMBOI.
Breakdown
MIN.
MAX.
UNIT
CONDITIONS.
.——
.. ——— —- ——
IC=-l OIIA, IE=O
v(aR)cBo
.—
‘( EIRICEO
-30
_——
v
iv.—
-.
Ic= 10mA,
IB=O*
CollectorEmitter
Breakdown
Voltage
Em(tter-Base
Voltage
Co; lector
Current
Emitter
—.
Breakdown
-30
-lo
-+-.
,
I
----
-1oo
nA
- ~=;;r
E
,:=;—..
,-
.—.—.
—.
—--
v(eR)EBo
Icao
—-.——
~ut-Off
vca=-30v,
IE=O
Cut-Off
Current
Saturation
lEB~
vc~(,at,
Collector-Emitter
Voltage
Base-Emitter
Saturation
-100
-1.5
—L-—-
2.0
nA
——
v
r
v
VEB=-l OV, Ic=o
—.-—
lc=-l OOmA, lB=-O,lmA’
vBE(,at,
Voltage
FZTA63
FZTA64
h~~
!
lc=-l OOmA~l B=-O.lm
A*
Static Forward
Current
Transfer
Rat o
———
Transition
Frequency
5K
10K
10K
20K
——
.—.
lc=-l OmA, VCE=-5V
lc=-l OOmA, VCE=-5V*
F,lc=-l OmA, ‘-VCE=-5V
fT
125
~E-v::~-*—
‘f=20MHz
q
Measured
under
pulsed
conditions.
Pulse width =300ys.
Duty cycle < 2“/.
3-303

FTZA64 Related Products

FTZA64 FTZA63
Description Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Is it Rohs certified? conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10000 5000
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz
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