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BB602M

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4
CategoryDiscrete semiconductor    The transistor   
File Size67KB,13 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

BB602M Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4

BB602M Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage6 V
Maximum drain current (ID)0.02 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.05 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)17 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BB602M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-815D (Z)
5th. Edition
Dec. 2000
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.6 dB typ. at f =900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes:
1.
2.
Marking is “BT–”.
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