BUV60
SILICON NPN SWITCHING TRANSISTOR
n
SGS-THOMSON PREFERRED SALESTYPE
FAST SWITCHING TIMES
LOW SWITCHING LOSSES
VERY LOW SATURATION VOLTAGE AND
HIGH GAIN FOR REDUCED LOAD
OPERATION
n
n
n
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
Bas e
P
tot
T
s tg
T
j
Parameter
Collector-emitter Voltage (V
BE
= -1.5V)
Collector-emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Reverse Bias Base Dissipation
(B. E. junction in avalanche)
o
T otal Power Dissipation at T
c ase
≤
25 C
Storage Temperature
Max Operating Junction Temperature
Valu e
250
125
7
50
80
10
18
3
250
-65 to 200
200
Unit
V
V
V
V
V
A
A
A
W
o
o
C
C
October 1995
1/5
BUV60
THERMAL DATA
R
thj -ca se
Thermal Resistance Junction-case
Max
0.7
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbo l
I
CER
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 10Ω)
Collector Cut-off
Current
Emitter Cut- off
Current (I
C
= 0)
T est Con ditio ns
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
I
C
= 0.2A
L = 25 mH
I
E
= 50 mA
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
=
=
=
=
25A
50A
60A
25A
50A
60A
50A
60A
50A
60A
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
=
=
=
=
=
=
=
=
=
=
1.25A
5A
7.5A
1.25A
5A
7.5A
5A
7.5A
5A
7.5A
125
7
0.45
0.65
0.75
0.45
0.7
0.9
1.4
1.55
1.45
1.65
100
90
160
150
2.5
3
1.8
1.9
3
4.5
2.2
3
0.9
0.9
1.2
1.2
1.5
1.8
1.6
1.8
1.7
1.9
T
c
= 100 C
V
BE
= -1.5V
o
V
BE
= - 1.5V T
C
=100 C
o
Min .
T yp.
Max.
1
5
1
4
1
Unit
mA
mA
mA
mA
mA
V
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
V
EB0
V
CE(sat)
∗
Emitter-base
Voltage (I
c
= 0)
Collector-Emitter
Saturation Voltage
T
j
= 100 C
o
T
j
= 100 C
T
j
= 100
o
C
o
V
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
V
BE(sat )
∗
Base-Emitter
Saturation Voltage
T
j
= 100 C
T
j
= 100
o
C
I
B1
= 7.5A
o
T
j
= 25 C
T
j
= 100
o
C
I
B1
= 5A
T
j
= 25
o
C
o
T
j
= 100 C
I
B1
= 5A
T
j
= 25
o
C
o
T
j
= 100 C
o
di
c
/d
t
∗
Rated of Rise of
on-state Collector
Current
Collector Emitter
Dynamic Voltage
Collector Emitter
Dynamic Voltage
V
CC
= 100V
R
C
= 0
V
CE(2µs )
V
CC
= 100V
R
C
= 2Ω
VCC = 100V
R
C
= 2Ω
V
CE(4µs )
∗
Pulsed: Pulse duration = 300
µs,
duty cycle = 2 %
2/5
BUV60
ELECTRICAL CHARACTERISTICS
(continued)
Symbo l
t
r
t
s
t
f
Parameter
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
INDUCT IVE LOAD
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
Storage Time
Fall Time
Tail Time in Turn-on
Storage Time
Fall Time
Tail Time in Turn-on
T est Con ditio ns
V
CC
= 100V
V
BB
= -5V
R
B2
= 0.33Ω
V
CC
= 100V
I
C
= 50A
V
BB
= -5V
L
C
= 0.1mH
VCC = 100V
I
C
= 50A
V
BB
= -5V
L
C
= 0.1mH
V
CC
= 100V
I
C
= 50A
V
BB
= 0
L
C
= 0.1mH
V
CC
= 100V
I
C
= 50A
V
BB
= 0
L
C
= 0.1mH
I
C
= 60A
I
B1
= 7.5A
T
p
= 30µs
V
cla mp
= 125V
I
B
= 5A
R
B2
= 0.5Ω
V
c la mp
= 125V
I
B
= 5A
R
B2
= 0.5Ω
T
j
= 100
o
C
V
c la mp
= 125V
I
B
= 5A
R
B2
= 1.5Ω
V
c la mp
= 125V
I
B
= 5A
R
B2
= 1.5Ω
T
j
= 100
o
C
Min .
T yp.
0.5
0.6
0.06
Max.
0.8
1.1
0.2
Unit
µs
µs
µs
t
s
t
f
t
t
t
c
t
s
t
f
t
t
t
c
t
s
t
f
t
t
t
s
t
f
t
t
0.5
0.05
0.01
0.1
0.85
0.12
0.04
0.2
1.5
1.3
0.4
2.7
1.8
0.6
1.2
0.15
0.05
0.3
1.5
0.25
0.1
0.5
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
=
2 %
3/5
BUV60
TO-3 (S) MECHANICAL DATA
mm
MIN.
A
B
C
D
E
G
N
P
R
U
V
11.00
1.47
1.50
8.32
19.00
10.70
16.50
25.00
4.00
38.50
30.00
TYP.
MAX.
13.10
1.60
1.65
8.92
20.00
11.10
17.20
26.00
4.09
39.30
30.30
MIN.
0.433
0.058
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
inch
TYP.
MAX.
0.516
0.063
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
DIM.
P
G
A
D
C
U
V
O
N
R
B
P003O
4/5
E
BUV60
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
s
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied.
s
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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