Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL ELECTRICAL CHARACTERISTICS
f T, CURRENT‐GAIN‐BANDWIDTH PRODUCT (MHz)
300
200
hFE, DC CURRENT GAIN
300
200
100
T
J
= 125°C
= 25°C
= - 55°C
100
70
50
V
CE
= 10 V
T
J
= 25°C
f = 30 MHz
V
CE
= 1.0 V
10
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
30
10
100
200
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 1. DC Current Gain
Figure 2. Current-Gain-Bandwidth Product
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BCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
Cib, CAPACITANCE (pF)
80
T
J
= 25°C
70
0.8
V, VOLTAGE (VOLTS)
0.6
V
BE(on)
@ V
CE
= 1.0 V
60
0.4
50
0.2
V
CE(sat)
@ I
C
/I
B
= 10
1.0
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
40
0
30
0
1.0
2.0
3.0
4.0
V
R
, REVERSE VOLTAGE (V)
5.0
Figure 3. “On” Voltage
Figure 4. Capacitance
T
J
= 25°C
Cob, CAPACITANCE (pF)
20
R
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
25
- 0.8
-1.2
-1.6
R
qVB
for V
BE
- 2.0
15
10
- 2.4
5.0
0
5.0
10
15
V
R
, REVERSE VOLTAGE (V)
20
- 2.8
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 5. Capacitance
Figure 6. Base−Emitter Temperature
Coefficient
10
T
J
= 25°C
I
C
, COLLECTOR CURRENT (A)
1.0
VCE , COLLECTOR VOLTAGE (V)
0.8
100 ms
1
1 ms
0.6
= 1000 mA
I C = 10 mA
= 100 mA
0.4
= 50 mA
10 ms
0.2
= 500 mA
0
0.01
0.1
1.0
10
I
B
, BASE CURRENT (mA)
100
0.1
1
10
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
100
Figure 7. Saturation Region
Figure 8. Safe Operating Area
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BCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
310
300
290
280
270
260
250
240
230
220
210
200
190
180
170
160
150
140
130
50
45
C
ob
, CAPACITANCE (pF)
40
35
30
25
20
15
10
5
0
1
2
3
V
R
, REVERSE VOLTAGE (V)
4
5
0
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
25
T
J
= 25°C
f = 1 MHz
T
J
= 25°C
f = 1 MHz
C
ib
, CAPACITANCE (pF)
Figure 9. Input Capacitance
Figure 10. Output Capacitance
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