500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
| Parameter Name | Attribute value |
| Maker | Motorola ( NXP ) |
| package instruction | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | EUROPEAN PART NUMBER |
| Maximum collector current (IC) | 0.5 A |
| Collector-based maximum capacity | 30 pF |
| Collector-emitter maximum voltage | 100 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 2.5 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 50 MHz |
| VCEsat-Max | 0.7 V |
| BDC01DRL | BDC01DRLRF | BDC01DRLRM | BDC01DRLRE | BDC01DRLRA | BDC01DZL1 | BDC01DRL1 | BDC01DRLRB | BDC01DRLRP | |
|---|---|---|---|---|---|---|---|---|---|
| Description | 500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| package instruction | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Maximum collector current (IC) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
| Collector-based maximum capacity | 30 pF | 30 pF | 30 pF | 30 pF | 30 pF | 30 pF | 30 pF | 30 pF | 30 pF |
| Collector-emitter maximum voltage | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 25 | 25 | 25 | 25 | 25 | 25 | 25 | 25 | 25 |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power consumption environment | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 50 MHz | 50 MHz | 50 MHz | 50 MHz | 50 MHz | 50 MHz | 50 MHz | 50 MHz | 50 MHz |
| VCEsat-Max | 0.7 V | 0.7 V | 0.7 V | 0.7 V | 0.7 V | 0.7 V | 0.7 V | 0.7 V | 0.7 V |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 |
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