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BF420

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size303KB,1 Pages
ManufacturerShanghai Lunsure Electronic Technology Co., Ltd.
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Transistor

BF420 Parametric

Parameter NameAttribute value
MakerShanghai Lunsure Electronic Technology Co., Ltd.
package instruction,
Reach Compliance Codeunknown
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
BF420
BF422
Features
Capable of 0.83Watts of Power Dissipation.
Collector-current 0.1A
Collector-base Voltage: BF420 300V
BF422 250V
Operating and storage junction temperature range: -55
O
C to +150
O
C
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
Pin Configuration
Bottom View
A
E C
B
E
Electrical Characteristics @ 25 C Unless Otherwise Specified
O
B
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
BF420
BF422
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
BF420
BF422
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=200Vdc, I
E
=0)
Emitter Cutoff C
urrent
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=25mAdc,V
CE
=20Vdc)
Collector-Emitter Saturation Voltage
(I
C
=30mAdc, I
B
=5.0mAdc)
Transition Frequency
(V
CE
=10Vdc, I
C
=10mA dc, f=100MHz)
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
300
250
300
250
5.0
---
---
---
---
---
---
---
0.01
0.05
Vdc
C
Vdc
Adc
uAdc
uAdc
D
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
fT
50
---
60
---
0.6
---
---
Vdc
MHz
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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