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S-LBAS20LT1G

Description
Rectifier Diode, 1 Element, 200V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size300KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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S-LBAS20LT1G Overview

Rectifier Diode, 1 Element, 200V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

S-LBAS20LT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
LESHAN RADIO COMPANY, LTD.
High Voltage Switching Diode
FEATURE
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LBAS20LT1G
S-LBAS20LT1G
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
SOT– 23
Device
LBAS20LT1G
S-LBAS20LT1G
LBAS20LT3G
S-LBAS20LT3G
Marking
JR
Shipping
3000/Tape&Reel
3
CATHODE
1
ANODE
JR
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
200
200
625
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Symbol
P
D
Max
200
1.57
R
θJA
T
J
, T
stg
–55 to+150
°C
Unit
mW
mW/°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
I
R
V
(BR)
V
F
1000
1250
5.0
50
200
1.0
100
Vdc
mV
Min
Max
Unit
µAdc
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 200 Vdc)
(V
R
= 200 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 30 mAdc, R
L
= 100
Ω)
C
D
t
rr
pF
ns
Rev.O 1/3

S-LBAS20LT1G Related Products

S-LBAS20LT1G S-LBAS20LT3G
Description Rectifier Diode, 1 Element, 200V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 Rectifier Diode, 1 Element, 200V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
Maker LRC LRC
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.2 W 0.2 W
Guideline AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 200 V 200 V
Maximum reverse recovery time 0.05 µs 0.05 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL

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