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BC238B

Description
Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size64KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric Compare View All

BC238B Overview

Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

BC238B Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
LOW NOISE AMPLIFIER APPLICATION.
B
BC237/8/9
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.)
(V
CE
=6V, I
C
=0.1mA, f=1kHz).
For Complementary With PNP type BC307/308/309.
K
D
G
N
E
A
High Voltage : BC237 V
CEO
=45V.
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
50
L
H
UNIT
F
F
Collector-Base Voltage
BC238
BC239
BC237
V
CBO
30
30
45
V
M
C
BC237
1
2
3
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. COLLECTOR
2. BASE
3. EMITTER
Collector-Emitter Voltage
BC238
BC239
BC237
V
CEO
20
20
6
V
TO-92
Emitter-Base Voltage
BC238
BC239
BC237
V
EBO
5
5
100
V
Collector Current
BC238
BC239
BC237
I
C
100
50
-100
mA
Emitter Current
BC238
BC239
I
E
-50
-50
mA
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
P
C
T
j
T
stg
625
150
-55
150
mW
1994. 3. 2
Revision No : 0
1/2

BC238B Related Products

BC238B BC238A BC238C BC237A
Description Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Maker KEC KEC KEC KEC
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 TO-92, 3 PIN TO-92, 3 PIN CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 20 V 20 V 20 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 180 120 380 120
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz
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