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BC337-16

Description
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size338KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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BC337-16 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

BC337-16 Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
BC337
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
DC Current Gain : h
FE
=100 630 (V
CE
=1V, I
c
=100mA).
For Complementary with PNP type BC327.
K
D
E
G
N
A
High Current : I
C
=800mA.
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
50
45
5
800
-800
625
150
-55 150
UNIT
F
H
F
V
L
M
V
V
mA
mA
mW
1
2
3
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification none:100 630,
SYMBOL
I
CBO
h
FE
V
CE(sat)
V
BE(ON)
f
T
C
ob
16:100 250,
TEST CONDITION
V
CB
=45V, I
E
=0
V
CE
=1V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
25:160 400,
40:250 630
MIN.
-
100
-
-
-
-
TYP.
-
-
-
-
100
16
MAX.
100
630
0.7
1.2
-
-
V
V
MHz
pF
UNIT
nA
2000. 2. 28
Revision No : 2
1/2

BC337-16 Related Products

BC337-16 BC337-25 BC337-40
Description Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Maker KEC KEC KEC
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) - 0.8 A 0.8 A
Collector-emitter maximum voltage - 45 V 45 V
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 160 250
JEDEC-95 code - TO-92 TO-92
JESD-30 code - O-PBCY-T3 O-PBCY-T3
Number of components - 1 1
Number of terminals - 3 3
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL
Polarity/channel type - NPN NPN
Maximum power dissipation(Abs) - 0.625 W 0.625 W
Certification status - Not Qualified Not Qualified
surface mount - NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - BOTTOM BOTTOM
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 100 MHz 100 MHz
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