BC337-40 datasheet, PDF - EEWORLD Datasheet

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BC337-40: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size338KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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BC337-40 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

BC337-40 Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	250
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

B

BC337

EPITAXIAL PLANAR NPN TRANSISTOR

C

FEATURES

DC Current Gain : h

FE

=100 630 (V

CE

=1V, I

c

=100mA).

For Complementary with PNP type BC327.

K

D

E

G

N

A

High Current : I

C

=800mA.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

E

P

C

T

j

T

stg

RATING

50

45

5

800

-800

625

150

-55 150

UNIT

F

H

F

V

L

M

V

mA

mW

1

2

3

C

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

_

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

J

1. COLLECTOR

2. BASE

3. EMITTER

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

Classification none:100 630,

SYMBOL

I

CBO

h

FE

V

CE(sat)

V

BE(ON)

f

T

C

ob

16:100 250,

TEST CONDITION

V

CB

=45V, I

E

=0

V

CE

=1V, I

C

=100mA

I

C

=500mA, I

B

=50mA

V

CE

=1V, I

C

=300mA

V

CE

=5V, I

C

=10mA, f=100MHz

V

CB

=10V, f=1MHz, I

E

=0

25:160 400,

40:250 630

MIN.

-

100

-

TYP.

-

100

16

MAX.

100

630

0.7

1.2

-

V

MHz

pF

UNIT

nA

2000. 2. 28

Revision No : 2

1/2

BC337-40 Related Products

	BC337-40	BC337-16	BC337-25
Description	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Maker	KEC	KEC	KEC
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.8 A	-	0.8 A
Collector-emitter maximum voltage	45 V	-	45 V
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	250	-	160
JEDEC-95 code	TO-92	-	TO-92
JESD-30 code	O-PBCY-T3	-	O-PBCY-T3
Number of components	1	-	1
Number of terminals	3	-	3
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL
Polarity/channel type	NPN	-	NPN
Maximum power dissipation(Abs)	0.625 W	-	0.625 W
Certification status	Not Qualified	-	Not Qualified
surface mount	NO	-	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	BOTTOM	-	BOTTOM
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON
Nominal transition frequency (fT)	100 MHz	-	100 MHz

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