BC337-25 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BC337-25

Preview

BC337-25: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), NPN; CategoryDiscrete semiconductor The transistor; File Size53KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

Download Datasheet Parametric Compare View All

BC337-25 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	BC337-25	-	-	View	Buy Now

BC337-25 Overview

Small Signal Bipolar Transistor, 0.8A I(C), NPN

BC337-25 Parametric

Parameter Name	Attribute value
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.625 W
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

Preview

Download Datasheet

View All

UTC BC337/338

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER

APPLICATIONS

FEATURES

*Suitable for AF-Driver stages and low power output

stages

*Complement to BC327/328

1

TO-92

1: COLLECTOR 2: BASE 3: EMITTER

ABSOLUTE MAXIMUM RATINGS

(Ta=25°C, unless otherwise specified)

PARAMETER

Collector-emitter voltage

: BC337

: BC338

Collector-emitter voltage

: BC337

: BC338

Emitter-base voltage

Collector current (DC)

Collector dissipation

Junction Temperature

Storage Temperature

SYMBOL

V

CES

RATING

50

30

UNIT

V

mA

mW

°C

V

CEO

45

25

5

800

625

150

-55 ~ +150

V

EBO

Ic

Pc

T

j

T

STG

ELECTRICAL CHARACTERISTICS

(Ta=25°C, unless otherwise specified)

PARAMETER

Collector-emitter breakdown voltage

: BC337

: BC338

Collector-emitter breakdown voltage

: BC337

: BC338

Emitter-base breakdown voltage

Collector Cut-off Current

: BC337

: BC338

DC current gain

Collector-emitter saturation voltage

SYMBOL

BV

CEO

TEST CONDITIONS

Ic=10mA, I

B

=0

MIN

45

25

TYP

MAX

UNIT

V

BV

CES

Ic=0.1mA, V

BE

=0

50

30

5

2

100

60

100

630

0.7

BV

EBO

I

CES

I

E

=0.1mA, Ic=0

V

CE

=45V, I

B

=0

V

CE

=25V, I

B

=0

V

CE

=1V, Ic=100mA

V

CE

=1V, Ic=300mA

Ic=500mA, I

B

=50mA

nA

h

FE1

h

FE2

V

CE

(sat)

V

UTC

UNISONIC TECHNOLOGIES CO., LTD.

1

QW-R201-039,B

BC337-25 Related Products

	BC337-25	BC338-16	BC337-16	BC338-25	BC337-40	BC338-40
Description	Small Signal Bipolar Transistor, 0.8A I(C), NPN	Small Signal Bipolar Transistor, 0.8A I(C), NPN	Small Signal Bipolar Transistor, 0.8A I(C), NPN	Small Signal Bipolar Transistor, 0.8A I(C), NPN	Small Signal Bipolar Transistor, 0.8A I(C), NPN	Small Signal Bipolar Transistor, 0.8A I(C), NPN
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant	compliant	compliant	compliant	compli	compliant
Maximum collector current (IC)	0.8 A	-	-	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	45 V	-	-	25 V	45 V	25 V
Configuration	SINGLE	-	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	-	-	160	250	250
JEDEC-95 code	TO-92	-	-	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	-	-	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	-	-	1	1	1
Number of terminals	3	-	-	3	3	3
Maximum operating temperature	150 °C	-	-	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	-	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	-	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	-	-	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.625 W	-	-	0.625 W	0.625 W	0.625 W
surface mount	NO	-	-	NO	NO	NO
Terminal form	THROUGH-HOLE	-	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	-	-	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	-	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	-	-	100 MHz	100 MHz	100 MHz

Recommended Resources

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components