MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
P4KE SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE - 6.8 TO 550 Volts
400 Watt Peak Pulse Power
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-O
• Glass passivated chip junction in DO-41 package
• 400W surge capability at 1ms
• Excellent clamping capability
• Low zener impedance
• Low incremental surge resistance
• Excellent clamping capability
• Fast response time: typically less than
1.0 ps from 0 volts to BV min
• Typical I
R
less than 1µA above 10V
• High temperature soldering guaranteed:
300°C/10 seconds/ .375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-41 Molded plastic
Terminals: Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.012 ounces, 0.3 grams
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types P4KE6.80 thru types P4KE550 (e.g. P4KE6.8C, P4KE550CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For Capacitive load, derate current by 20%
RATING
Peak Pulse Power Dissipation at T
A
= 25 °C, T
P
= 1ms
(NOTE 1)
SYMBOL
P
PPM
I
PPM
VALUE
Minimum 400
SEE TABLE 1
1.0
40
-55 +175
UNITS
Watts
Amps
Watts
Amps
°C
Peak Pulse Current of on 10/1000 µs waveform
(Note 1)
Steady State Power Dissipation at
T
L
= 75°C
Lead lengths .375", 9.5mm
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed on Rated Load,
(JEDEC Method)(Note 3)
Operatings and Storage Temperature Range
P
M
(AV)
I
FSM
T
J
, T
STG
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on Copper Pad area of 1.6x1.6" (40x40mm) per Fig.5.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.
Certified RoHS Compliant
UL File # E223026
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES P4KE SERIES
P
PPM
-Peak Pulse Power (kW)
Fig. 1 - Peak Pulse Power Rating
100
Fig.2 - Pulse Derating Curve
100
Peak Pulse Power (P
PP
)
or Current (I
PPM
)
Derating in Percentage,%
Non-repetitive Pulse
Waveform shown in Fig.
3
10
75
50
1
25
0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
T
A
- Ambient Temperature (°C)
t
d
- Pulse Width (sec.)
Fig.3 - Pulse Waveform
150
Fig.4 - Typ.Junction Capacitance Uni-Directional
10000
t
r
= 10µsec.
I
PPM
- Peak Pulse Current,
% I
RSM
Peak Value
I
PPM
100
Half Value- I
PPM
2
Pulse Width(td)is
defined
as the point where the
peak current decays to
50% of I
C
J
- Junction Capacitance
T
J
= 25°C
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
1000
Measured at Zero Bias
50
10/1000µsec.Waveform
as defined by R.E.A.
100
t
d
0
0
1.0
1000
Measured at
Stand-Off
Voltage, V
WM
10
3.0
t - Time(ms)
2.0
3.
4.0
4.0
1.0
V
WM
-
Reverse Stand-Off Voltage (V)
10
100
200
Fig.5 - steady State Power Derating Curve
1.00
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
200
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
PM
(AV )
,Steady State Power
Dissipation (W)
0.88
0.75
0.63
0.50
0.38
0.25
0.13
0.00
L=0.375" (9.5mm)
Lead Lengths
60 HZ Resistive or
Inductive Load
I
FSM
- Peak
Forward
Surge Current (A)
100
50
1.6x1.6x.040"
(40x40x1mm)
Copper Heat Sinks
10
1
5
10
50
100
100
T
L
- Lead Temperature (°C)
0
25
50
75
100
125
150
175
200
Fig.7 - Typical Reverse Leakage Characteristics
Measured at Devices
Stand-off Voltage,V
WM
T
A
= 25°C
Number of Cycles at 60 Hz
Fig. 8 - Typ.Transient Thermal Impedance
100
10
1
Transient Thermal Impedance
(°C/W)
I
D
- Instantaneous
Reverse
Leakage Current (µA)
10
0.1
0.01
0
50
100
150
200
250
300
350
400
450
500
1
0.001
0.01
0.1
1
10
100
1000
V
(BR)
- Breakdown Voltage
t
p
-Pulse Duration (sec)
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
400 Watt TVS
UNI-POLAR
BI-POLAR
REVERSE BREAKDOWN BREAKDOWN
MAXIMUM
TEST
VOLTAGE
VOLTAGE
STANDOFF
CLAMPING
CURRENT
V
BR
(V)
V
BR
(V)
VOLTAGE
VOLTAGE
mA
(I
T
)
V
RWM
(V)
@I
PP
V
C
(V)
MIN. @ I
T
MAX. @ I
T
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103.0
113.0
125.0
137.0
152.0
165.0
179.0
207.0
219.0
234.0
246.0
274.0
328.0
344.0
414.0
482.0
548.0
602.0
658.0
698.0
725.0
740.0
760.0
PEAK
PULSE
CURRENT
I
PP
(A)
39.0
36.3
33.9
30.6
28.3
26.3
24.6
22.5
19.3
18.2
16.1
14.8
13.4
12.3
10.9
9.9
9.0
8.2
7.6
6.9
6.3
5.8
5.3
4.8
4.5
4.0
3.6
3.3
3.0
2.7
2.5
2.3
2.0
1.9
1.8
1.7
1.5
1.3
1.2
1.0
0.85
0.75
0.68
0.61
0.57
0.55
0.54
0.52
REVERSE
LEAKAGE
@ V
RWM
I
R
(µA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5.80
6.45
7.14
P4KE6.8A
P4KE6.8CA
6.40
7.13
7.88
P4KE7.5A
P4KE7.5CA
7.02
7.79
8.61
P4KE8.2A
P4KE8.2CA
7.78
8.65
9.55
P4KE9.1A
P4KE9.1CA
8.55
9.50
10.50
P4KE10A
P4KE10CA
9.40
10.50
11.60
P4KE11A
P4KE11CA
10.20
11.40
12.60
P4KE12A
P4KE12CA
11.10
12.40
13.70
P4KE13A
P4KE13CA
10.00
14.30
15.80
P4KE15A
P4KE15CA
12.90
15.20
16.80
P4KE16A
P4KE16CA
14.50
17.10
18.90
P4KE18A
P4KE18CA
17.10
19.00
21.00
P4KE20A
P4KE20CA
18.80
20.90
23.10
P4KE22A
P4KE22CA
20.50
22.80
25.20
P4KE24A
P4KE24CA
23.10
25.70
28.40
P4KE27A
P4KE27CA
25.60
28.50
31.50
P4KE30A
P4KE30CA
28.20
31.40
34.70
P4KE33A
P4KE33CA
30.80
34.20
37.80
P4KE36A
P4KE36CA
33.30
37.10
41.00
P4KE39A
P4KE39CA
36.80
40.90
45.20
P4KE43A
P4KE43CA
40.20
44.70
49.40
P4KE47A
P4KE47CA
43.60
48.50
53.60
P4KE51A
P4KE51CA
47.80
53.20
58.80
P4KE56A
P4KE56CA
53.00
58.90
65.10
P4KE62A
P4KE62CA
58.10
64.60
71.40
P4KE68A
P4KE68CA
64.10
71.30
78.80
P4KE75A
P4KE75CA
70.10
77.90
86.10
P4KE82A
P4KE82CA
77.80
86.50
95.50
P4KE91A
P4KE91CA
85.50
95.00
105.00
P4KE100A P4KE100CA
94.00
105.00
116.00
P4KE110A P4KE110CA
102.00
114.00
126.00
P4KE120A P4KE120CA
111.00
124.00
137.00
P4KE130A P4KE130CA
128.00
143.00
158.00
P4KE150A P4KE150CA
136.00
152.00
168.00
P4KE160A P4KE160CA
145.00
162.00
179.00
P4KE170A P4KE170CA
154.00
171.00
189.00
P4KE180A P4KE180CA
171.00
190.00
210.00
P4KE200A P4KE200CA
185.00
209.00
231.00
P4KE220A P4KE220CA
214.00
237.00
263.00
P4KE250A P4KE250CA
256.00
285.00
315.00
P4KE300A P4KE300CA
300.00
333.00
368.00
P4KE350A P4KE350CA
342.00
380.00
420.00
P4KE400A P4KE400CA
376.00
418.00
462.00
P4KE440A P4KE440CA
408.00
456.00
504.00
P4KE480A P4KE480CA
434.00
485.00
535.00
P4KE510A P4KE510CA
450.00
503.50
556.50
P4KE530A P4KE530CA
459.00
513.00
567.00
P4KE540A P4KE540CA
467.00
522.50
577.50
P4KE550A P4KE550CA
For bidirectional type having Vrwm of 10 volts and less, the IR limit is double.
For parts without A , the VBR is ± 10%
Certified RoHS Compliant
UL File # E223026
FPGA/CPLD
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