DIONICS, INC.
65 Rushmore Street
Westbury, NY 11590
Phone: (516) 997-7474
Fax: (516) 997-7479
Website:
www.dionics- usa.com
DIG-11-8-30-DD; DIG-12-08-30-DD; DIG-22-8-30-DD
Photovoltaic MOSFET Drivers With Dynamic Discharge*
*US Patent 4,931,656
Features:
Ø
Ø
Ø
Ø
Ø
Ø
Ø
Ø
Ø
Fast Turn Off, Active Gate Discharge
Dielectrically Isolated
Logic Circuit Compatibility
High Open Circuit Voltage
High Operating Temperature
Fast Response Time
High Isolation Resistance
Excellent Input/Output Linearity
Self Limiting Gate Voltage
Applications:
Ø
Ø
Ø
Ø
Ø
Ø
Ø
Ø
Ø
Gate Drive For MOS devices
Gate Drive For SCR
Solid-State Relays
Interface Between Logic Circuits & External Loads
A.T.E. (Automatic Test Equipment)
Switching Equipment
Isolation Amplifiers
Load Control From Microprocessor I/O Ports
Thermocouple Open Detectors
Description:
The photovoltaic MOSFET-driver is a State-of- the-Art, optically coupled floating power source used primarily to control
MOSFETs or IGBTs when electrical isolation between input and output is required.
In addition to the infrared LED and photovoltaic (PV) diode array, each of the DD (Dynamic Discharge) products
contains circuitry that rapidly discharges the power MOSFET gate when the LED is deactivated. The unique rapid
discharge features of the photovoltaic MOSFET-drivers make them particularly useful for high-side switching of N-
channel MOSFETs in solid-state relays, DC motor control and switching regulator applications.
The typical input circuit to the LED is a limiting resistor connected in series with the LED. When activated, the LED
emits infrared light towards the photovoltaic diode array, which then responds by generating an open circuit voltage (V
oc
),
thus disabling the turn-off circuitry. The self-limiting photovoltaic output of the diode array is floating and therefore, can
be safely applied directly to the gate and source of a MOSFET, regardless of the source potential of the MOSFET. When
the LED is deactivated, the active turn-off circuit discharges the capacitive input of the MOSFET. The active turn-off
circuitry is designed such that the turn-off time of the MOSFET is relatively independent of the input capacitance of the
MOSFET over a range of 50 to 5000 pF. Standard packages include low cost plastic mini-dips and hermetic 8-pin DIP
ceramic side brazed.
v
Package Layout:
0.380
0.380
Pin Designation
DIG-11
8-30-DD
xxxx
DIG-12
8-30-DD
xxxx
0.020
0.020
Pin
Number
1
2
3
4
5
6
7
8
Part Number
11-8-30-DD 12-8-30-DD 22-8-30-DD
Input +
Input +
Input 1+
Input -
Input -
Input 1-
Not Connected Not Connected Input 2+
Not Connected Not Connected
Input 2-
Not Connected Output1+
Output2+
Output +
Output1-
Output2-
Not Connected Output2+
Output1+
Output -
Output2-
Output1-
07/2002
0.250
0.185
0.025
0.070
0.025
0.070
0.185
0.250
DIG-11-8-30-DD; DIG-12-8-30-DD; DIG-22-8-30-DD Equivalent Circuits:
1
LED
PV
T.O
Cir.
8
1
PV
LED
T.O
Cir.
8
1
LED
PV
T.O
Cir.
8
2
7
2
7
2
7
3
6
3
PV
T.O
Cir.
6
3
LED
PV
T.O
Cir.
6
4
5
4
5
DIG-11-8-30-DD
DIG-12-8-30-DD
DIG-22-8-30-DD
Ceramic Package Only
v
Absolute Maximum Ratings (T
a
= 25
0
C)
LED Forward Current
LED Forward Current
LED Reverse Voltage
Output Discharge Current
Operating Temperature Range
Operating Temperature Range
Storage Temperature
Power Dissipation
Steady State
Peak 10% Duty Cycle
100 mA
250 mA
10V
50mA
-40 to 85
0
C
-50 to 125
0
C
-50 to 125
0
C
250 mW
Plastic D.I.P
Side Braze D.I.P
v
Individual Channel Electrical Characteristics (T
a
=25
0
C)
Model Number
Parameter & Test Condition
Open Circuit Voltage*
I
led
= 2mA
I
led
= 10mA
I
led
= 30 mA; 50% Duty Cycle
Short Circuit Current
I
led
= 2mA
I
led
= 10mA
I
led
= 30 mA; 50% Duty Cycle
LED Forward Voltage
I
f
= 20mA
DIG-11-8-30-DD
DIG-12-8-30-DD
DIG-22-8-30-DD
LED Reverse Current
V
r
= 5V
Off State Voltage
I
off
= 10µA; I
led
= 0mA
Isolation Voltage
Temperature Coefficients
I
led
= 10mA
Turn-On Time
I
led
= 30 mA
C = 1500pF; Voc to 10%
Turn-Off Time**
I
led
= 30 mA
C = 1500pF; Voc to 50%
DIG-
Symbol
V
oc
11-8-30-DD; 12-8-30-DD; 22-8-30-DD
Min.
Typ.
Max.
8.5
9.5
10.5
I
sc
1.0
10.0
30.0
V
r
-
-
-
I
r
0.1
V
off
V
iso
èV
èI
T
on
-
2500
-
-
-
0.65
-
45
0.5
100
1.0
-
-
-
-
V
VDC
mV /
0
C
%I /
0
C
ìs
10.0
ìA
1.3
2.6
1.3
1.7
3.4
1.7
V
V
V
3.0
15.0
50.0
-
-
-
ìA
ìA
ìA
9.5
10.5
11.5
-
-
-
Unit
V
V
V
T
off
-
3.0
6.0
ìs
* Ceramic version differs. Contact factory for specifications
** For proper turn -off operation, gate must be charged to 90% of its final value before turn -off initiated
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