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BFG67

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size1MB,20 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BFG67 Overview

Transistor,

BFG67 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.05 A
ConfigurationSingle
Minimum DC current gain (hFE)60
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)7500 MHz

BFG67 Related Products

BFG67 BFG67/X BFG67/XR BFG67R
Description Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown unknown unknow
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 60 60 60 60
JESD-609 code e0 e0 e0 e0
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
surface mount YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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