BFG325/XR
NPN 14 GHz wideband transistor
Rev. 2 — 15 September 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features and benefits
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
1.3 Applications
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVision (SATV) tuners
repeater amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
I
C
P
tot
h
FE
C
CBS
f
T
Quick reference data
Conditions
open emitter
open base
T
sp
90
C
I
C
= 15 mA; V
CE
= 3 V;
T
j
= 25
C
V
CB
= 5 V; f = 1 MHz;
emitter grounded
I
C
= 15 mA; V
CE
= 3 V;
f = 1 GHz; T
amb
= 25
C
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
Min
-
-
-
-
60
-
-
Typ
-
-
-
-
100
0.26
14
Max
15
6
35
210
200
0.4
-
Unit
V
V
mA
mW
pF
GHz
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
Quick reference data
…continued
Conditions
I
C
= 15 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
C
I
C
= 15 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
C;
Z
S
= Z
L
= 50
s
=
opt
; I
C
= 3 mA;
V
CE
= 3 V; f = 2 GHz
Min
-
-
Typ
18.3
14
Max
-
-
Unit
dB
dB
maximum power gain
[2]
insertion power gain
Table 1.
G
max
s
21
2
Symbol Parameter
NF
noise figure
-
1.1
-
dB
[1]
[2]
T
sp
is the temperature at the soldering point of the collector pin.
G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG, see
Figure 4.
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
collector
emitter
base
emitter
2
1
2, 4
sym086
Simplified outline
3
4
Symbol
1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BFG325/XR
Description
Version
SOT143R
SC-61AA plastic surface mounted package; reverse pinning;
4 leads
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
S2*
Type number
BFG325/XR
[1]
* = p: made in Hong Kong.
BFG325_XR
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
2 of 13
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
90
C
[1]
Min
-
-
-
-
-
65
-
Max
15
6
2
35
210
+175
175
Unit
V
V
V
mA
mW
C
C
T
sp
is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6.
R
th(j-sp)
[1]
Thermal characteristics
Conditions
T
sp
90
C
[1]
Symbol Parameter
thermal resistance from junction to solder point
Typ
405
Unit
K/W
T
sp
is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
I
CBO
h
FE
C
CBS
C
CES
C
EBS
f
T
G
max
s
21
2
collector-base cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
maximum power gain
[1]
insertion power gain
Conditions
I
E
= 0 A; V
CB
= 5 V
I
C
= 15 mA; V
CE
= 3 V
V
CB
= 5 V; f = 1 MHz; emitter grounded
V
CE
= 5 V; f = 1 MHz; base grounded
V
EB
= 0.5 V; f = 1 MHz; collector grounded
I
C
= 15 mA; V
CE
= 3 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C
I
C
= 15 mA; V
CE
= 3 V; T
amb
= 25
C;
Z
S
= Z
L
= 50
f = 1.8 GHz
f = 3 GHz
NF
P
L(1dB)
IP3
noise figure
output power at 1 dB gain
compression
third order intercept point
s
=
opt
; I
C
= 3 mA; V
CE
= 3 V; f = 2 GHz
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C;
Z
S
= Z
L
= 50
I
C
= 15 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C;
Z
S
= Z
L
= 50
-
-
-
-
-
14
10
1.1
8.7
19.4
-
-
-
-
-
dB
dB
dB
dBm
dBm
Min
-
60
-
-
-
-
-
Typ
-
100
0.26
0.27
0.53
14
18.3
Max
15
200
0.4
-
-
-
-
pF
pF
pF
GHz
dB
Unit
nA
BFG325_XR
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
3 of 13
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
[1]
G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG, see
Figure 4.
1
+
Ds
–
s
11
–
s
22
-
K is the Rollet stability factor:
K
=
----------------------------------------------------------
where
Ds
=
s
11
s
22
–
s
12
s
21
.
2
s
21
s
12
MSG = maximum stable gain.
2
2
2
250
P
tot
(mW)
200
001aac147
I
C
(mA)
30
25
35
I
B
= 350
μA
300
μA
250
μA
001aac148
150
20
15
10
200
μA
150
μA
100
μA
50
μA
100
50
5
0
0
50
100
150
T
sp
(°C)
200
0
0
1
2
3
4
5
V
CE
(V)
6
Fig 1.
Power derating curve
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
40
001aac150
0.34
C
CBS
(pF)
0.30
001aac149
G
(dB)
MSG
30
s
21 2
20
G
max
0.26
10
0.22
0
1
2
3
4
V
CB
(V)
5
0
10
10
2
10
3
f (MHz)
10
4
I
C
= 0 mA; f = 1 MHz.
I
C
= 15 mA; V
CE
= 3 V.
Fig 3.
Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 4.
Gain as a function of frequency; typical values
BFG325_XR
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
4 of 13
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
0.4
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
+0.2
3 GHz
+5
40 MHz
−0.2
−5
−135°
−0.5
−1
−90°
−2
−45°
1.0
001aac151
V
CE
= 3 V; I
C
= 15 mA; Z
o
= 50
.
Fig 5.
Common emitter input reflection coefficient (s
11
); typical values
90°
135°
45°
40 MHz
180°
50
40
30
20
10
0 3 GHz
0°
−135°
−45°
−90°
001aac152
V
CE
= 3 V; I
C
= 15 mA.
Fig 6.
Common emitter forward transmission coefficient (s
21
); typical values
BFG325_XR
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
5 of 13
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