BFT92E6327 datasheet, PDF - EEWORLD Datasheet

BFT92E6327: DescriptionRF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, PNP; CategoryDiscrete semiconductor The transistor; File Size159KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BFT92E6327 Overview

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, PNP

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.025 A
Collector-based maximum capacity	0.8 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
highest frequency band	L BAND
JESD-30 code	R-PDSO-G3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	5000 MHz

	BFT92E6327	BFT92E6433
Description	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, PNP	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, PNP,
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.025 A	0.025 A
Collector-based maximum capacity	0.8 pF	0.8 pF
Collector-emitter maximum voltage	15 V	15 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15
highest frequency band	L BAND	L BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	5000 MHz	5000 MHz

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