BSR57T/R datasheet, PDF - EEWORLD Datasheet

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BSR57T/R: DescriptionTRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size79KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BSR57T/R Overview

TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal

BSR57T/R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	PLASTIC, SMD, SST3, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	0.01 A
Maximum drain-source on-resistance	40 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSR57T/R Related Products

	BSR57T/R	BSR56T/R	BSR58T/R
Description	TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 5 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal
Is it Rohs certified?	conform to	conform to	conform to
Maker	NXP	NXP	NXP
package instruction	PLASTIC, SMD, SST3, 3 PIN	SMALL OUTLINE, R-PDSO-G3	PLASTIC, SMD, SST3, 3 PIN
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	40 V	40 V	40 V
Maximum drain current (ID)	0.01 A	0.02 A	0.005 A
Maximum drain-source on-resistance	40 Ω	25 Ω	60 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	5 pF	5 pF	5 pF
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.225 W	0.3 W	0.225 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	TIN	TIN	TIN
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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