TRANSISTOR 5 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| package instruction | PLASTIC, SMD, SST3, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 40 V |
| Maximum drain current (ID) | 0.005 A |
| Maximum drain-source on-resistance | 60 Ω |
| FET technology | JUNCTION |
| Maximum feedback capacitance (Crss) | 5 pF |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.225 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| BSR58T/R | BSR56T/R | BSR57T/R | |
|---|---|---|---|
| Description | TRANSISTOR 5 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal | TRANSISTOR 20 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal | TRANSISTOR 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal |
| Is it Rohs certified? | conform to | conform to | conform to |
| Maker | NXP | NXP | NXP |
| package instruction | PLASTIC, SMD, SST3, 3 PIN | SMALL OUTLINE, R-PDSO-G3 | PLASTIC, SMD, SST3, 3 PIN |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 40 V | 40 V | 40 V |
| Maximum drain current (ID) | 0.005 A | 0.02 A | 0.01 A |
| Maximum drain-source on-resistance | 60 Ω | 25 Ω | 40 Ω |
| FET technology | JUNCTION | JUNCTION | JUNCTION |
| Maximum feedback capacitance (Crss) | 5 pF | 5 pF | 5 pF |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e3 | e3 | e3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.225 W | 0.3 W | 0.225 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal surface | TIN | TIN | TIN |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 40 | 40 | 40 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
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