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BF904WR

Description
TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICROMINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size119KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
Download Datasheet Parametric View All

BF904WR Overview

TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICROMINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal

BF904WR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionMICROMINIATURE, PLASTIC PACKAGE-4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationCOMPLEX
Minimum drain-source breakdown voltage7 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.035 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components2
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.28 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
BF904WR
N-channel dual-gate MOS-FET
Product specification
Supersedes data of 1995 Apr 25
2010 Sep 15
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