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1 pC Charge Injection, 100 pA Leakage,
CMOS 5 V/+5 V/+3 V Quad SPST Switches
ADG611/ADG612/ADG613
FUNCTIONAL BLOCK DIAGRAMS
ADG611
S1
IN1
D1
S2
IN2
D2
S3
IN3
D3
S4
IN4
IN4
D4
D4
IN3
D3
S4
IN4
D4
IN2
D2
S3
IN3
D3
S4
IN1
D1
S2
IN2
D2
S3
FEATURES
1 pC Charge Injection
2.7 V to 5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range –40 C to +125 C
100 pA Max @ 25 C Leakage Currents
85 On-Resistance
Rail-to-Rail Switching Operation
Fast Switching Times
16-Lead TSSOP Packages
Typical Power Consumption (<0.1 W)
TTL/CMOS-Compatible Inputs
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Systems
Communication Systems
Sample and Hold Systems
Audio Signal Routing
Relay Replacement
Avionics
ADG612
S1
IN1
ADG613
S1
D1
S2
SWITCHES SHOWN FOR A LOGIC “1” INPUT
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG611, ADG612, and ADG613 are monolithic CMOS
devices containing four independently selectable switches. These
switches offer ultralow charge injection of 1 pC over full input
signal range and typical leakage currents of 10 pA at 25°C.
They are fully specified for
±
5 V, +5 V, and +3 V supplies.
They contain four independent single-pole/single-throw (SPST)
switches. The ADG611 and ADG612 differ only in that the
digital control logic is inverted. The ADG611 switches are turned
on with a logic low on the appropriate control input, while a logic
high is required to turn on the switches of the ADG612. The
ADG613 contains two switches whose digital control logic is
similar to the ADG611, while the logic is inverted on the other
two switches.
Each switch conducts equally well in both directions when ON
and has an input signal range that extends to the supplies. The
ADG613 exhibits break-before-make switching action. The
ADG611/ADG612/ADG613 are available in small 16-lead
TSSOP packages.
1. Ultralow Charge Injection (1 pC typically)
2. Dual
±
2.7 V to
±
5.5 V or Single +2.7 V to +5.5 V
Operation.
3. Automotive Temperature Range, –40°C to +125°C
4. Small 16-lead TSSOP package.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
ADG611/ADG612/ADG613–SPECIFICATIONS
DUAL SUPPLY
1
(V
Parameter
DD
= +5 V
10%, V
SS
= –5 V
10%, GND = 0 V, unless otherwise noted.)
Y Version
–40 C
–40 C
to +85 C
to +125 C
25 C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
On-Resistance (R
ON
)
On-Resistance Match Between
Channels (∆R
ON
)
On-Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
I
SS
V
SS
to V
DD
85
115
2
4
25
40
±
0.01
±
0.1
±
0.01
±
0.1
±
0.01
±
0.1
140
5.5
55
160
6.5
60
V
Ω
typ
Ω
max
Ω
typ
Ω
max
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
µA
typ
µA
max
µA
typ
µA
max
V
S
=
±
3 V, I
S
= –1 mA
Test Circuit 1
V
S
=
±
3 V, I
S
= –1 mA
V
S
=
±
3 V, I
S
= –1 mA
V
DD
= +5.5 V, V
SS
= –5.5 V
V
D
=
±
4.5 V, V
S
= 4.5 V;
Test Circuit 2
V
D
=
±
4.5 V, V
S
= 4.5 V;
Test Circuit 2
V
D
= V
S
=
±
4.5 V, Test Circuit 3
±
0.25
±
0.25
±
0.25
±
2
±
2
±
6
2.4
0.8
0.005
±
0.1
2
45
65
25
40
15
–0.5
–65
–90
680
5
5
5
0.001
1.0
0.001
1.0
V
IN
= V
INL
or V
INH
75
45
90
50
10
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3.0 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3.0 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= V
S2
= 3.0 V, Test Circuit 5
V
S
= 0 V, R
S
= 0
Ω,
C
L
= 1 nF, Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF,
f = 10 MHz, Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF,
f = 10 MHz, Test Circuit 8
R
L
= 50
Ω,
C
L
= 5 pF,
Test Circuit 9
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
DD
= +5.5 V, V
SS
= –5.5 V
Digital Inputs = 0 V or 5.5 V
Digital Inputs = 0 V or 5.5 V
NOTES
1
Temperature range is as follows. Y Version: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
ADG611/ADG612/ADG613
SINGLE SUPPLY
1
(V
Parameter
ANALOG SWITCH
Analog Signal Range
On-Resistance (R
ON
)
On-Resistance Match Between
Channels (∆R
ON
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
2
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
DD
=5V
10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
Y Version
–40 C
–40 C
to +85 C to +125 C Unit
0 V to V
DD
210
290
3
10
±
0.01
±
0.1
±
0.01
±
0.1
±
0.01
±
0.1
350
12
380
13
V
Ω
typ
Ω
max
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
µA
typ
µA
max
V
IN
= V
INL
or V
INH
25 C
Test Conditions/Comments
V
S
= 3.5 V, I
S
= –1 mA;
Test Circuit 1
V
S
= 3.5 V , I
S
= –1 mA
V
DD
= 5.5 V
V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V;
Test Circuit 2
V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V;
Test Circuit 2
V
S
= V
D
= 1 V or 4.5 V, Test Circuit 3
±
0.25
±
0.25
±
0.25
±
2
±
2
±
6
2.4
0.8
0.005
±
0.1
2
70
100
25
40
25
1
–62
–90
680
5
5
5
0.001
1.0
130
45
150
50
10
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3.0 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3.0 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= V
S2
= 3.0 V, Test Circuit 5
V
S
= 0 V, R
S
= 0
Ω,
C
L
= 1 nF;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
Test Circuit 8
R
L
= 50
Ω,
C
L
= 5 pF, Test Circuit 9
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
DD
= 5.5 V
Digital Inputs = 0 V or 5.5 V
NOTES
1
Temperature ranges are as follows. Y Version: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. 0
–3–
ADG611/ADG612/ADG613–SPECIFICATIONS
SINGLE SUPPLY
1
(V
Parameter
ANALOG SWITCH
Analog Signal Range
On-Resistance (R
ON
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
DD
=3V
10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
Y Version
–40 C
to +85 C
–40 C
to +125 C
0 V to V
DD
460
25 C
Unit
V
Ω
typ
Test Conditions/Comments
380
420
V
S
= 1.5 V, I
S
= –1 mA;
Test Circuit 1
V
DD
= 3.3 V
V
S
= 1 V/3 V, V
D
= 3 V/1 V;
Test Circuit 2
V
S
= 1 V/3 V, V
D
= 3 V/1 V;
Test Circuit 2
V
S
= V
D
= 1 V or 3 V, Test Circuit 3
±
0.01
±
0.1
±
0.01
±
0.1
±
0.01
±
0.1
±
0.25
±
0.25
±
0.25
±
2
±
2
±
6
2.0
0.8
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
µA
typ
µA
max
0.005
±
0.1
2
130
185
40
55
50
1.5
–62
–90
680
5
5
5
0.001
1.0
V
IN
= V
INL
or V
INH
230
60
260
65
10
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= V
S2
= 2 V, Test Circuit 5
V
S
= 0 V, R
S
= 0
Ω,
C
L
= 1 nF;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
Test Circuit 8
R
L
= 50
Ω,
C
L
= 5 pF, Test Circuit 9
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
DD
= 3.3 V
Digital Inputs = 0 V or 3.3 V
NOTES
1
Temperature ranges are as follows. Y Version: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–4–
REV. 0
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