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B10S

Description
0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size317KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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B10S Overview

0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

B1S THRU B10S
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 0.8 Ampere
FEATURES
Surge overload rating - 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
MBS
.275(7.0)MAX
.067(1.7)
.057(1.3)
.051(1.3)
.035(0.9)
.165(4.2)
.150(3.8)
.031(0.8)
.019(0.5) .106(2.7)
.09(2.3)
.014(.35)
.006(.15)
.043(1.1)
.027(0.7)
.067(1.7)
.057(1.3)
MECHANICAL DATA
Case : MBS, Molded Plastic
Epoxy : Device has UL flammability classification 94V-0
Mounting Position : Any
Weight : 0.22 grams (approx.)
Marking : Type Number
.193(4.9)
.177(4.5)
.106(2.7)
.09(2.3)
.008(0.2)
1
2
3
4
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @T
A
= 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
2
t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 0.8A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
B1S
B2S
B4S
B6S
B8S
B10S
Unit
100
70
200
140
400
280
0.8
600
420
800
560
1000
700
V
V
A
I
FSM
I
2
t
V
FM
I
RM
C
j
R
R
JA
JL
30
10
1.1
5.0
500
25
85
20
-55 to +150
A
A
2
s
V
µA
pF
°C/W
°C
Typical Junction Capacitance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
T
j
, T
STG
Note: 1. Mounted on glass epoxy PC board with 1.3mm
2
solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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Description 0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

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