B1S THRU B10S
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 0.8 Ampere
FEATURES
Surge overload rating - 30 Amperes peak
Ideal for printed circuit board
●
Reliable low cost construction utilizing molded
●
Glass passivated device
●
Polarity symbols molded on body
●
●
MBS
.275(7.0)MAX
.067(1.7)
.057(1.3)
.051(1.3)
.035(0.9)
.165(4.2)
.150(3.8)
.031(0.8)
.019(0.5) .106(2.7)
.09(2.3)
.014(.35)
.006(.15)
.043(1.1)
.027(0.7)
.067(1.7)
.057(1.3)
MECHANICAL DATA
Case : MBS, Molded Plastic
●
Epoxy : Device has UL flammability classification 94V-0
●
Mounting Position : Any
●
Weight : 0.22 grams (approx.)
●
Marking : Type Number
●
.193(4.9)
.177(4.5)
.106(2.7)
.09(2.3)
.008(0.2)
1
2
3
4
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @T
A
= 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
2
t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 0.8A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
B1S
B2S
B4S
B6S
B8S
B10S
Unit
100
70
200
140
400
280
0.8
600
420
800
560
1000
700
V
V
A
I
FSM
I
2
t
V
FM
I
RM
C
j
R
R
JA
JL
30
10
1.1
5.0
500
25
85
20
-55 to +150
A
A
2
s
V
µA
pF
°C/W
°C
Typical Junction Capacitance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
T
j
, T
STG
Note: 1. Mounted on glass epoxy PC board with 1.3mm
2
solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
B1S THRU B10S
RATINGS AND CHARACTERISTIC CURVES
FIG.1-FORW ARD CURRENT DERATING CURVE
1.0
AVERAGE FORWARD CURRENT
AMPERES
0.8
0.6
0.4
0.2
0.1
MOUNT ED ON BOARD
SINGLE PHASE HALF W AVE 60Hz
RESIST IVE OR INDUCT IVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
40
30
20
10
PULSE W IDT H 8.3ms
SINGLE HALF-SINE-W AVE
(JEDEC MET HOD)
20
40
60
80
100
120
140
160
0
AMBIENT TEMPERATURE,
(°C)
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL FORW ARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT,
(A)
FIG.3-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,(mA)
10
T
J
=125
°C
1.0
1.0
0.1
T
J
=25
°C
0.1
T
J
=25
°C
PULSE W IDTH 300us
0.01
0
20
40
60
80
100
120
140
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE
"
(%)
INSTANTANEOUS FORW ARD VOLTAGE, (V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
CAPACITANCE(
P
F)
10
T J=25
°C
"
f=1MHZ
1.0
1
4
10.0
REVERSE VOLTAGE
"
(V)
100
NXP MCU
京公网安备 11010802033920号
EEWORLD
