BZX85C3V3 THRU BZX85C56
1.3W EPITAXIAL ZENER DIODE
FEATURES
•
Low profile package
•
Built-in strain relief
•
Low inductance
•
High temperature soldering : 260°C /10 seconds at terminals
•
Glass package has Underwriters Laboratory Flammability
Classification
•
In compliance with EU RoHS 2002/95/EC directives
DO-41(GLASS)
Φ
0.8± 0.1
MECHANICAL DATA
•
Case: Molded Glass DO-41G
•
Terminals: Axial leads, solderable per MIL-STD-750,
Method 2026 guaranteed
•
Polarity: Color band denotes positive end
•
Mounting position:Any
•
Weight: 0.012 ounce, 0.336 gram
Φ
2.5 ± 0.2
All Dimensions in mm
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(T
A
=25℃)
Symbols
Zener current see table "Characteristics"
Power dissipation at TA=50℃
Junction temperature
Storage temperature range
Value
Units
P
tot
T
J
T
STG
1.3
1)
175
-65 to +200
25.4 ± 1
4.5 ± 0.2
25.4 ± 1
W
℃
℃
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
ELECTRCAL CHARACTERISTICS(T
A
=25℃)
Symbols
Thermal resistance junction to ambient
Forward voltage at IF=200mA
Min
Typ
Max
170
1.2
1)
Units
R
thA
V
F
℃
/W
V
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
BZX85C3V3 THRU BZX85C56
RATINGS AND CHARACTERISTIC CURVES
Characteristics
(T
j
=25
℃
unless otherwise specified)
Ptot –Total Power Dissipation (W)
R
thJA
– Therm. Resist. Junction/
Ambient (K/W)
Tamb – Ambient Temperature(
℃
)
Figure1.Total Power Dissipation vs. Ambient
Temperature
C
D
–Diode Capacitance (pF)
l – Lead Length (mm
)
Figure2. Thermal Resistance vs. Lead Length
V
R
=0V
V
R
=2V
V
R
=5V
V
R
=20V
V
R
=30V
Vz-Z-Voltage (V)
Figure3. Diode Capacitance vs. Z-Voltage
Zthp – Thermal Resistance for
r
z
–Differential Z-Resistance (
Ω
)
Vz-Z-Voltage (V)
Figure4.Differential Z-Resistance vs.Z-Voltage
Pulse Cond. (K/W)
Figure5. Thermal Response
t
p
–Pulse Length (ms)
Embedded System
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