J/SST/U308 Series
N-Channel JFETs
J308
J309
J310
Product Summary
Part Number
J308
J309
J310
SST308
SST309
SST310
U309
U310
SST308
SST309
SST310
12
12
24
12
12
24
12
24
U309
U310
V
GS(off)
(V)
–1 to –6.5
–1 to –4
–2 to –6.5
–1 to –6.5
–1 to –4
–2 to –6.5
–1 to –4
–2.5 to –6
V
(BR)GSS
Min (V)
–25
–25
–25
–25
–25
–25
–25
–25
g
fs
Min (mS)
8
10
8
8
10
8
10
10
I
DSS
Min (mA)
Features
D
Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
D
Very Low Noise: 2.7 dB @ 450 MHz
D
Very Low Distortion
D
High ac/dc Switch Off-Isolation
Benefits
D
D
D
D
D
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
Applications
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
Description
The J/SST/U308 series offers superb amplification
characteristics. Of special interest is its high frequency
performance. Even at 450 MHz, this series offers high
power gain at low noise.
Low cost J series TO 226AA (TO 92) packaging supports
automated assembly with tape and reel options. The
SST series
TO 236
(SOT 23)
package
provides
TO-226AA
(TO-92)
D
S
G
1
D
S
1
3
2
2
2
D
Top View
U309
U310
3
G and Case
G
TO-236
(SOT-23)
S
1
surface mount capabilities and is available with
tape and reel options. The U series hermetically sealed
TO 206AC (TO 52) package supports full military
processing. (See Military and Packaging Information for
further details.)
For similar dual products packaged in the TO 78, see the
U430/431 data sheet.
TO-206AC
(TO-52)
3
Top View
J308
J309
J310
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70237.
Applications information may also be obtained via FaxBack, request document #70597.
Siliconix
S-52424—Rev. F, 14-Apr-97
1
J/SST/U308 Series
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current :
(J/SST Prefixes) . . . . . . . . . . . . . . . . 10 mA
(U Prefix) . . . . . . . . . . . . . . . . . . . . . 20 mA
1
/ ” from case for 10 sec.) . . . . . . . . . . . . . . . 300_C
Lead Temperature (
16
Storage Temperature :
(J/SST Prefixes) . . . . . . . . . . –55 to 150_C
(U Prefix) . . . . . . . . . . . . . . . –65 to 175_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation :
(J/SST Prefixes)
a
. . . . . . . . . . . . . 350 mW
(U Prefix)
b
. . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
Specifications
a
for J/SST308, J/SST309 and J/SST310
Limits
J/SST308
J/SST309
J/SST310
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
c
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
b
Min Max Min Max Min Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
r
DS(on)
V
GS(F)
I
G
= –1
mA
, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 nA
V
DS
= 10 V, V
GS
= 0 V
V
GS
= –15 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 9 V, I
D
= 10 mA
V
GS
= 0 V, I
D
= 1 mA
I
G
= 10 mA
V
DS
= 0 V
J
–35
–25
–1
12
–6.5
60
–1
–1
–25
–1
12
–4
30
–1
–1
–25
–2
24
–6.5
60
–1
–1
V
mA
nA
mA
pA
W
–0.002
–0.001
–15
35
0.7
1
1
1
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input C
I
Capacitance
i
Common-Source
Reverse T
R
Transfer C
f Capacitance
i
Equivalent Input
Noise Voltage
g
fs
g
os
C
iss
C
rss
e
n
V
DS
= 10 V, I
D
= 10 mA
,
f = 1 kH
kHz
J
V
DS
= 10 V
V
GS
= –10 V
f = 1 MHz
SST
J
SST
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
14
110
4
4
1.9
1.9
6
nV⁄
√Hz
2.5
2.5
2.5
pF
8
250
5
10
250
5
8
250
5
mS
mS
High Frequency
Common-Gate
Forward T
F
d Transconductance
d
Common-Gate
Output C d
O
Conductance
Common-Gate Power Gain
d
Noise Figure
g
fg
g
og
V
DS
= 10 V
I
D
= 10 mA
A
G
pg
NF
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
14
13
0.16
0.55
16
11.5
1.5
2.7
NZB
dB
mS
Notes
a. T
A
= 25_C unless otherwise noted.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v3%.
d. Gain (G
pg
) measured at optimum input noise match.
2
Siliconix
S-52424—Rev. F, 14-Apr-97
J/SST/U308 Series
Specifications
a
for U309 and U310
Limits
U309
U310
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
c
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
r
DS(on)
V
GS(F)
I
G
= –1
mA
, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 nA
V
DS
= 10 V, V
GS
= 0 V
V
GS
= –15 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 9 V, I
D
= 10 mA
V
GS
= 0 V, I
D
= 1 mA
I
G
= 10 mA , V
DS
= 0 V
–35
–25
–1
12
–4
30
–0.15
–0.15
–25
V
–2.5
24
–6
60
–0.15
–0.15
mA
nA
mA
pA
W
1
1
V
–0.002
–0.001
–15
35
0.7
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
g
fs
g
os
C
iss
C
rss
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
14
V
DS
= 10 V, I
D
= 10 mA
,
f = 1 kH
kHz
110
4
,
V
DS
= 10 V, V
GS
= –10 V
MHz
f = 1 MH
1.9
6
2.5
2.5
nV⁄
√Hz
250
5
250
5
pF
10
10
mS
mS
High Frequency
Common-Gate
Forward T
F
d Transconductance
d
Common-Gate
Output C d
O
Conductance
Common-Gate Power Gain
d
f = 105 MHz
g
fg
f = 450 MHz
f = 105 MHz
g
og
V
DS
= 10 V
S
I
D
= 10 mA
A
G
pg
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
Noise Figure
NF
f = 450 MHz
Notes
a. T
A
= 25_C unless otherwise noted.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v3%.
d. Gain (G
pg
) measured at optimum input noise match.
2.7
3.5
3.5
NZB
14
13
mS
0.16
0.55
16
11.5
1.5
14
10
2
14
10
dB
2
Siliconix
S-52424—Rev. F, 14-Apr-97
3
J/SST/U308 Series
Typical Characteristics
100
I
DSS
– Saturation Drain Current (mA)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
50
g
fs
– Forward Transconductance (mS)
Gate Leakage Current
10 nA
I
G @
I
D
= 10 mA
1 nA
I
G
– Gate Leakage
T
A
= 125_C
200
mA
80
40
60
g
fs
40
I
DSS
30
100 pA
I
GSS
@ 125_C
200
mA
20
10 pA
10 mA
T
A
= 25_C
1 pA
I
GSS
@ 25_C
20
10
0
0
–1
–2
–3
–4
–5
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
0.1 pA
0
3
6
9
12
15
V
DG
– Drain-Gate Voltage (V)
100
r
DS(on)
– Drain-Source On-Resistance (k
W
)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
300
g
fs
– Forward Transconductance (mS)
20
Common-Source Forward Transconductance
vs. Drain Current
V
GS(off)
= –3 V
V
DS
= 10 V
f = 1 kHz
g
os
– Output Conductance (
m
S)
80
240
16
T
A
= –55_C
12
60
r
DS
180
g
os
120
40
8
25_C
125_C
20
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
0
0
–1
–2
–3
–4
–5
V
GS(off)
– Gate-Source Cutoff Voltage (V)
60
4
0
0
0.1
1
I
D
– Drain Current (mA)
10
Output Characteristics
15
V
GS(off)
= –1.5 V
12
I
D
– Drain Current (mA)
–0.2 V
9
–0.4 V
6
–0.6 V
3
–0.8 V
–1.0 V
0
0
0.2
0.4
0.6
0.8
1
V
DS
– Drain-Source Voltage (V)
0
0
0.2
I
D
– Drain Current (mA)
V
GS
= 0 V
24
30
Output Characteristics
V
GS(off)
= –3 V
V
GS
= 0 V
18
–0.4 V
–0.8 V
–1.2 V
–1.6 V
12
6
–2.0 V
–2.4 V
0.4
0.6
0.8
1
V
DS
– Drain-Source Voltage (V)
4
Siliconix
S-52424—Rev. F, 14-Apr-97
J/SST/U308 Series
Typical Characteristics (Cont’d)
Output Characteristics
20
V
GS(off)
= –1.5 V
V
GS
= 0 V
16
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
–0.2 V
40
–0.4 V
30
–0.8 V
–1.2 V
–1.6 V
10
–2.0 V
–2.4 V
0
2
4
6
8
10
50
V
GS(off)
= –3 V
V
GS
= 0 V
Output Characteristics
12
–0.4 V
8
–0.6 V
–0.8 V
–1.0 V
0
0
2
4
6
8
10
V
DS
– Drain-Source Voltage (V)
20
4
0
V
DS
– Drain-Source Voltage (V)
Transfer Characteristics
30
V
GS(off)
= –1.5 V
24
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
V
DS
= 10 V
80
100
Transfer Characteristics
V
GS(off)
= –3 V
V
DS
= 10 V
18
T
A
= –55_C
25_C
60
T
A
= –55_C
25_C
12
40
6
125_C
20
125_C
0
0
–0.4
–0.8
–1.2
–1.6
–2
V
GS
– Gate-Source Voltage (V)
0
0
–0.6
–1.2
–1.8
–2.4
–3
V
GS
– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
30
g
fs
– Forward Transconductance (mS)
g
fs
– Forward Transconductance (mS)
V
GS(off)
= –1.5 V
24
T
A
= –55_C
25_C
V
DS
= 10 V
f = 1 kHz
50
Transconductance vs. Gate-Source Voltage
V
GS(off)
= –3 V
40
T
A
= –55_C
30
25_C
20
125_C
10
V
DS
= 10 V
f = 1 kHz
18
125_C
12
6
0
0
–0.4
–0.8
–1.2
–1.6
–2
V
GS
– Gate-Source Voltage (V)
0
0
–0.6
–1.2
–1.8
–2.4
–3
V
GS
– Gate-Source Voltage (V)
Siliconix
S-52424—Rev. F, 14-Apr-97
5
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