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U309

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size116KB,7 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
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U309 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN

U309 Parametric

Parameter NameAttribute value
MakerTEMIC
package instructionTO-206AC (TO-52), 3 PIN
Reach Compliance Codeunknow
ConfigurationSINGLE
Minimum drain-source breakdown voltage25 V
FET technologyJUNCTION
Maximum feedback capacitance (Crss)5 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
J/SST/U308 Series
N-Channel JFETs
J308
J309
J310
Product Summary
Part Number
J308
J309
J310
SST308
SST309
SST310
U309
U310
SST308
SST309
SST310
12
12
24
12
12
24
12
24
U309
U310
V
GS(off)
(V)
–1 to –6.5
–1 to –4
–2 to –6.5
–1 to –6.5
–1 to –4
–2 to –6.5
–1 to –4
–2.5 to –6
V
(BR)GSS
Min (V)
–25
–25
–25
–25
–25
–25
–25
–25
g
fs
Min (mS)
8
10
8
8
10
8
10
10
I
DSS
Min (mA)
Features
D
Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
D
Very Low Noise: 2.7 dB @ 450 MHz
D
Very Low Distortion
D
High ac/dc Switch Off-Isolation
Benefits
D
D
D
D
D
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
Applications
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
Description
The J/SST/U308 series offers superb amplification
characteristics. Of special interest is its high frequency
performance. Even at 450 MHz, this series offers high
power gain at low noise.
Low cost J series TO 226AA (TO 92) packaging supports
automated assembly with tape and reel options. The
SST series
TO 236
(SOT 23)
package
provides
TO-226AA
(TO-92)
D
S
G
1
D
S
1
3
2
2
2
D
Top View
U309
U310
3
G and Case
G
TO-236
(SOT-23)
S
1
surface mount capabilities and is available with
tape and reel options. The U series hermetically sealed
TO 206AC (TO 52) package supports full military
processing. (See Military and Packaging Information for
further details.)
For similar dual products packaged in the TO 78, see the
U430/431 data sheet.
TO-206AC
(TO-52)
3
Top View
J308
J309
J310
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70237.
Applications information may also be obtained via FaxBack, request document #70597.
Siliconix
S-52424—Rev. F, 14-Apr-97
1

U309 Related Products

U309 J310 SST309 SST310 SST308
Description RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-220AA (TO-92), 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN
Maker TEMIC TEMIC TEMIC TEMIC TEMIC
package instruction TO-206AC (TO-52), 3 PIN TO-220AA (TO-92), 3 PIN TO-236, 3 PIN TO-236, 3 PIN TO-236, 3 PIN
Reach Compliance Code unknow unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 25 V 25 V 25 V 25 V 25 V
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
JESD-30 code O-MBCY-W3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Package body material METAL PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES YES YES
Terminal form WIRE THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location BOTTOM BOTTOM DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
JEDEC-95 code - - TO-236 TO-236 TO-236
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