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GM71C4403CR-60

Description
EDO DRAM, 1MX4, 60ns, CMOS, PDSO20,
Categorystorage    storage   
File Size108KB,10 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric Compare View All

GM71C4403CR-60 Overview

EDO DRAM, 1MX4, 60ns, CMOS, PDSO20,

GM71C4403CR-60 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSK Hynix
package instructionTSOP, TSOP20/26,.36
Reach Compliance Codecompliant
Maximum access time60 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G20
JESD-609 codee0
memory density4194304 bit
Memory IC TypeEDO DRAM
memory width4
Number of terminals20
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP20/26,.36
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply5 V
Certification statusNot Qualified
refresh cycle1024
reverse pinoutYES
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.13 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
LG Semicon Co.,Ltd.
Description
The GM71C4403C is the new generation dynamic
RAM organized 1,048,576 words x 4 bit.
GM71C4403C has realized higher density, higher
performance and various functions by utilizing
advanced CMOS process technology. The
GM71C4403C offers Extended Data Out (EDO)
Mode as a high speed access Mode. Multiplexed
address inputs permit the GM71C4403C to be
packaged in a standard 300mil 20(26) pin plastic
SOJ , and standard 300mil 20(26) pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely available
automated testing and insertion equipment. System
oriented features include single power supply of
5V+/-10% tolerance, direct interfacing capability
with high performance logic families such as
Schottky TTL.
GM71C4403C
1,048,576 WORDS x 4BIT
CMOS DYNAMIC RAM
Features
* 1,048,576 Words x 4 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
GM71C4403C-60
GM71C4403C-70
GM71C4403C-80
60
70
80
t
CAC
15
18
20
t
RC
104
124
144
t
HPC
25
30
35
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
*1024 Refresh Cycles/16ms
Pin Configuration
20 (26) SOJ
I/O1
I/O2
WE
RAS
A9
1
2
3
4
5
20
19
18
17
16
20 (26) TSOP II
V
SS
I/O4
I/O3
CAS
OE
I/O1
I/O2
WE
RAS
A9
1
2
3
4
5
20
19
18
17
16
V
SS
I/O4
I/O3
CAS
OE
V
SS
I/O4
I/O3
CAS
OE
20
19
18
17
16
1
2
3
4
5
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
6
7
8
9
10
15
14
13
12
11
A8
A7
A6
A5
A4
A0
A1
A2
A3
V
CC
6
7
8
9
10
15
14
13
12
11
A8
A7
A6
A5
A4
A8
A7
A6
A5
A4
15
14
13
12
11
6
7
8
9
10
A0
A1
A2
A3
V
CC
NORMAL TYPE
REVERSE TYPE
(Top View)
(Top View)
1

GM71C4403CR-60 Related Products

GM71C4403CR-60 GM71C4403CR-70 GM71C4403CT-60 GM71C4403CT-70 GM71C4403CJ-80 GM71C4403CT-80 GM71C4403CR-80 GM71C4403CJ-70
Description EDO DRAM, 1MX4, 60ns, CMOS, PDSO20, EDO DRAM, 1MX4, 70ns, CMOS, PDSO20, EDO DRAM, 1MX4, 60ns, CMOS, PDSO20, EDO DRAM, 1MX4, 70ns, CMOS, PDSO20, EDO DRAM, 1MX4, 80ns, CMOS, PDSO20, EDO DRAM, 1MX4, 80ns, CMOS, PDSO20, EDO DRAM, 1MX4, 80ns, CMOS, PDSO20, EDO DRAM, 1MX4, 70ns, CMOS, PDSO20
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix
package instruction TSOP, TSOP20/26,.36 TSOP, TSOP20/26,.36 TSOP, TSOP20/26,.36 TSOP, TSOP20/26,.36 SOJ, SOJ20/26,.34 TSOP, TSOP20/26,.36 TSOP, TSOP20/26,.36 SOJ, SOJ20/26,.34
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
Maximum access time 60 ns 70 ns 60 ns 70 ns 80 ns 80 ns 80 ns 70 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G20 R-PDSO-G20 R-PDSO-G20 R-PDSO-G20 R-PDSO-J20 R-PDSO-G20 R-PDSO-G20 R-PDSO-J20
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
memory width 4 4 4 4 4 4 4 4
Number of terminals 20 20 20 20 20 20 20 20
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP TSOP TSOP TSOP SOJ TSOP TSOP SOJ
Encapsulate equivalent code TSOP20/26,.36 TSOP20/26,.36 TSOP20/26,.36 TSOP20/26,.36 SOJ20/26,.34 TSOP20/26,.36 TSOP20/26,.36 SOJ20/26,.34
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 1024 1024 1024 1024 1024 1024 1024 1024
self refresh NO NO NO NO NO NO NO NO
Maximum standby current 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A
Maximum slew rate 0.13 mA 0.12 mA 0.13 mA 0.12 mA 0.11 mA 0.11 mA 0.11 mA 0.12 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING J BEND GULL WING GULL WING J BEND
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
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