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GM71C4256ASJ-10

Description
Fast Page DRAM, 256KX4, 100ns, CMOS, PDSO20,
Categorystorage    storage   
File Size469KB,18 Pages
ManufacturerGoldstar Electron Co., Ltd.
Download Datasheet Parametric View All

GM71C4256ASJ-10 Overview

Fast Page DRAM, 256KX4, 100ns, CMOS, PDSO20,

GM71C4256ASJ-10 Parametric

Parameter NameAttribute value
MakerGoldstar Electron Co., Ltd.
Reach Compliance Codeunknown
access modeFAST PAGE
Maximum access time100 ns
Other featuresRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD-30 codeR-PDSO-J20
memory density1048576 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
refresh cycle512
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal locationDUAL
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