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BYV32EB-T

Description
DIODE 20 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size37KB,1 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYV32EB-T Overview

DIODE 20 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BYV32EB-T Parametric

Parameter NameAttribute value
MakerNXP
package instructionR-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSSO-G2
Number of components2
Number of terminals2
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.025 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
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