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GM71C4256BZ-60

Description
Fast Page DRAM, 256KX4, 60ns, CMOS, PZIP20,
Categorystorage    storage   
File Size1MB,19 Pages
ManufacturerLG Semicon Co., Ltd.
Download Datasheet Parametric View All

GM71C4256BZ-60 Overview

Fast Page DRAM, 256KX4, 60ns, CMOS, PZIP20,

GM71C4256BZ-60 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLG Semicon Co., Ltd.
Reach Compliance Codeunknown
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PZIP-T20
JESD-609 codee0
memory density1048576 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeZIP
Encapsulate equivalent codeZIP20,.1
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch1.27 mm
Terminal locationZIG-ZAG
Maximum time at peak reflow temperatureNOT SPECIFIED
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