ISL6612IRZ-T datasheet, PDF - EEWORLD Datasheet

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ISL6612IRZ-T: Description3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-10; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size615KB，12 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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ISL6612IRZ-T Overview

3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-10

ISL6612IRZ-T Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Parts packaging code	DFN
package instruction	HVSON, SOLCC10,.11,20
Contacts	10
Reach Compliance Code	compliant
ECCN code	EAR99
high side driver	YES
Interface integrated circuit type	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code	S-PDSO-N10
JESD-609 code	e3
length	3 mm
Humidity sensitivity level	3
Number of functions	1
Number of terminals	10
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Nominal output peak current	3 A
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC10,.11,20
Package shape	SQUARE
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	5/12,12 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum supply voltage	12 V
Minimum supply voltage	5 V
Supply voltage 1-max	13.2 V
Mains voltage 1-minute	10.8 V
Supply voltage1-Nom	12 V
surface mount	YES
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	NO LEAD
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	3 mm

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DATASHEET

ISL6612, ISL6613

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

The ISL6612 and ISL6613 are high frequency MOSFET

drivers specifically designed to drive upper and lower power

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with HIP63xx or

ISL65xx Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

The ISL6612 drives the upper gate to 12V, while the lower

gate can be independently driven over a range from 5V to

12V. The ISL6613 drives both upper and lower gates over a

range of 5V to 12V. This drive-voltage provides the flexibility

necessary to optimize applications involving trade-offs

between gate charge and conduction losses.

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs from

conducting simultaneously and to minimize the dead time.

These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at which

the PHASE node is connected to the gate of the low side

MOSFET (LGATE). The output voltage of the converter is then

limited by the threshold of the low side MOSFET, which

provides some protection to the microprocessor if the upper

MOSFET(s) is shorted during startup. The over-temperature

protection feature prevents failures resulting from excessive

power dissipation by shutting off the outputs when its junction

temperature exceeds +150°C (typically). The driver resets once

its junction temperature returns to +108°C (typically).

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

FN9153

Rev 9.00

June 15, 2010

Features

• Pin-to-pin Compatible with HIP6601 SOIC family for Better

Performance and Extra Protection Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- Auto-zero of r

DS(ON)

Conduction Offset Effect

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Over Temperature Protection (OTP) with +42°C

Hysteresis

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free Available (RoHS Compliant)

Applications

• Core Regulators for Intel® and AMD® Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief TB417 for Power Train Design, Layout

Guidelines, and Feedback Compensation Design

FN9153 Rev 9.00

June 15, 2010

Page 1 of 12

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