AP9410GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching
▼
RoHS Compliant & Halogen-Free
SO-8
S
D
D
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G
S
S
30V
6mΩ
18A
D
Description
AP9410 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
3
Rating
30
+12
18
15
80
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Drain Current, V
GS
@ 4.5V
3
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Unit
℃/W
1
201501123
Data and specifications subject to change without notice
AP9410GM-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=12A
V
GS
=2.5V, I
D
=6A
Min.
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
47
-
-
-
59
10
23
16
12
96
30
660
400
Max. Units
-
5
6
8
1.2
-
1
25
+100
95
-
-
-
-
-
-
-
-
V
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=30V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=18A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3 ,V
GS
=10V
R
D
=15
V
GS
=0V
V
DS
=25V
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
5080 8100
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=18A, V
GS
=0V
I
S
=18A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
43
39
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 125
℃/W
when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9410GM-HF
270
140
240
T
A
=25 C
o
210
I
D
, Drain Current (A)
10V
6.0V
5.0V
4.5V
I
D
, Drain Current (A)
120
T
A
=150 C
o
100
180
10V
6.0V
5.0V
4.5V
V
G
=2.5V
150
80
120
60
90
V
G
=2.5V
40
60
20
30
0
0.0
1.0
2.0
3.0
0
0
0.5
1
1.5
2
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
11
1.8
I
D
=18A
T
A
=25
o
C
Normalized R
DS(ON)
9
1.6
I
D
=18A
V
G
=10V
R
DS(ON)
(m
Ω
)
1.4
7
1.2
1
5
0.8
3
0.6
0
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
18
16
14
1.5
10
T
j
=150
o
C
T
j
=25
o
C
V
GS(th)
(V)
1
1.2
12
I
S
(A)
1
8
6
0.5
4
2
0
0
0
0.2
0.4
0.6
0.8
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9410GM-HF
12
f=1.0MHz
10000
I
D
= 18 A
10
C
iss
V
GS
, Gate to Source Voltage (V)
8
6
C (pF)
V
DS
=15V
V
DS
=20V
V
DS
=24V
1000
4
C
oss
C
rss
2
0
100
0
40
80
120
160
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
1ms
Normalized Thermal Response (R
thja
)
Operation in this area
limited by R
DS(ON)
100us
Duty factor =0.5
0.2
0.1
0.1
I
D
(A)
10ms
1
0.05
100ms
1s
0.1
0.02
0.01
P
DM
0.01
t
T
Single pulse
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthia=125
℃
/W
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9410GM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
9410GM
YWWSSS
5
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