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IRF221

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size83KB,1 Pages
ManufacturerThomson Consumer Electronics
Download Datasheet Parametric View All

IRF221 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

IRF221 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerThomson Consumer Electronics
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)40 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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