<^£.mi-(2onditctoi LPioducti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
RFP4N100, RF1S4N100SM
4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Features
• 4.3A, 1000V
•
r
DS(ON) = 3.500Q
• UIS Rating Curve (Single Pulse)
• -55°C to 150°C Operating Temperature
Symbol
Ordering Information
PART NUMBER
RFP4N100
RF1S4N100SM
PACKAGE
TO-220AB
TO-263AB
BRAND
RFP4N100
F1S4N100
G a
Q D
NOTE: When ordering, use the entire part number.
6
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
,. - .-"•*'„, GATE
GATE
SOURCE
DRAIN
"(FLANGE)
JEDEC TO-263AB
X *
DRAIN (FLANGE)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
RFP4N100, RF1S4N100SM
Absolute Maximum Ratings
T
c
=
25°C,
Unless Otherwise Specified
RFP4N100,
RF1S4N100SM
UNITS
Drain to Source Breakdown Voltage (Note 1 )
Drain to Gate Voltage (RQS = 20k£i) (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Single Pulse Avalanche Rating
Maximum Power Dissipation
Linear Derating Factor
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s
Package Body for 1 0s see Techbrief 334 .
. .
.
....
VQS
VnfiR
1000
1000
V
V
A
A
V
mJ
W
W/°C
°C
°C
°C
I
D
IOM
Vr<;
EAS
4.3
17
+20
(See UIS SOA Curve)
(Figures 4, 14,15)
P
D
• • •
T
J.
T
STG
150
1.2
~
55 to 1 50
T
L
T_,._
300
?fin
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating at
id
operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is rot implied.
NOTE:
= 25°Cto125°C.
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
c
= 25°C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
ID = 250uA, V
GS
= 0V (Figure 10)
V
GS
= V
DS
,l
D
= 250nA
MIN
TYP
-
-
-
-
-
-
-
-
-
-
-
MAX
-
4
25
100
UNITS
V
V
MA
HA
nA
O
ns
ns
ns
ns
nC
1000
2
-
-
-
-
-
-
-
-
IDSS
V
DS
= 1000V, V
GS
= ov
V
DS
= eoov, V
GS
=
ov
.
T
c =
1
50°c
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
IGSS
r
DS(ON)
V
GS
= ±2ov
I
D
= 2.5A, V
GS
=
10V
(Figures 8, 9)
±100
3.500
30
50
170
50
120
*d(ON)
tf
V
DD
= soov, I
D
= 3.9A, RQS = 9-m,
<d(OFF)
tf
Qg(TOT)
VGS = 20V, I
D
= 3.9A, Vps = SOOV
(Figure 13)
-
R
9JC
-
-
-
-
0.83
62
°C/W
°C/W
RejA
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
NOTES:
2. Pulse test: pulse width
<,
SOjis, duty cycle
£
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
SYMBOL
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.8
1000
UNITS
VSD
trr
ISD = 4.3A
I
SD
= 3.9A, dl
S
o'dt = 100A/US
V
ns
MCU
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