IRSF3011S datasheet, PDF - EEWORLD Datasheet

IRSF3011S: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size703KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRSF3011S Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	30 W
surface mount	YES

	IRSF3011S
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	30 W
surface mount	YES

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