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BDY23A

Description
Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-3
CategoryDiscrete semiconductor    The transistor   
File Size94KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

BDY23A Overview

Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-3

BDY23A Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Number of components1
Maximum operating temperature200 °C
Polarity/channel typeNPN
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
tSztni-Conauakoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 378-8960
*BDY23180T2
*BDY24,181T2
*BDY25.182T2
^f
Preferred device
Oitpotttif recommend*
LF large signal power amplification
Amplification BF grands siyniux de
puissance
V
CEO
\fC\J
High current fatt switching
Commutation rapide ton cotiimt
(60V
<90V
(140V
A
«
O
A
BDY23 •180T2
BDY24
- 181 T2
BOY 25
-182T2
i
"c
Ptot
R
th(j-c)
87,5 W
2°C/W
max
A
B
C
h
21E
(2A
>
5
15-45
model*
30-90 model*
75-180 models
Dissipation and IS/B derating
Variation de dissipation
«f
d» Ig/g
100%
Case TO-3
601 tier
-See outline drawing CB-19 on last pages
Voir drain
cot*
CB-W dtmitnt ptgn
r
S
i \
i
\>
i
i
"••»«
v
\%
Weight : 14,45
Mm*
Collector is connected to e
Le collK&vr ta nlii
«/ Aof
ABSOLUTE RATINGS (LIMITING VALUES)
VALEURS LIMITES ABSOLUES D'UTIUSATIQN
(Unless otherwise stated)
IStutlndiationicontnlntl
BOY 23
180 T2
BOY 24
181 T2
100
90
10
6
3
87,5
BOY 25
182 T2
200
140
10
6
3
87,5
Collector base voltage
Ttnsion coltfeaur-bfn
Collector-emitter voltage
Tffaioft coHicmr-tmttttur
Emitter-base voltage
Tmtioa imttnur-tHM
Collector current
Counnt collvctHir
Base current
Counnt bfat
Power dissipation
Distipttion dr puiwtnc*
Junction temperature
Ttmptntui* Ot ioitctlon
Storage temperature
Timpimurt df
Hoe*»B»
min
max
V
CBO
60
V
V
V
A
A
W
°C
°C
V
CEO
60
10
6
3
87.5
V
EBO
'c
'B
,
=
25°C
case
P
tot
f
i
200
-65
+ 200
200
-65
+ 200
200
-65
+ 200
'«,
«c
NJ Serni-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftim.shed by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use NJ
.Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
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