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BDY23A

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size73KB,3 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BDY23A Overview

Transistor

BDY23A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCOMSET
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)87.5 W
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Maximum off time (toff)500 ns
Maximum opening time (tons)500 ns
VCEsat-Max1 V
BDY23 – 180T2
BDY24 – 181T2
BDY25 – 182T2
NPN SILICON TRANSISTORS, DIFFUSED MESA
They are NPN transistors mounted in Jedec TO-3.
LF Large Signal Power Amplification.
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
@ T
C
= 25°
Value
60
90
140
60
100
200
10
Unit
V
V
CBO
Collector-Base Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
6
A
I
B
P
TOT
T
J
T
S
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
3
87.5
-65 to +200
A
Watts
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
2
Unit
°C/W
31/10/2012
COMSET SEMICONDUCTORS
1|3

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Description Transistor Transistor Chip Multilayer Ceramic Capacitors for General Purpose Chip Multilayer Ceramic Capacitors for General Purpose Chip Multilayer Ceramic Capacitors for General Purpose Transistor Transistor Transistor
Reach Compliance Code unknown unknown - - - unknown unknown unknown
Maximum collector current (IC) 6 A 6 A - - - 6 A 6 A 6 A
Configuration SINGLE Single - - - Single Single Single
Minimum DC current gain (hFE) 15 75 - - - 30 75 30
Maximum operating temperature 200 °C 200 °C - - - 200 °C 200 °C 200 °C
Polarity/channel type NPN NPN - - - NPN NPN NPN
Maximum power dissipation(Abs) 87.5 W 87.5 W - - - 87.5 W 87.5 W 87.5 W
surface mount NO NO - - - NO NO NO
Nominal transition frequency (fT) 10 MHz 10 MHz - - - 10 MHz 10 MHz 10 MHz
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