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KDS120

Description
0.1 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Environmental Compliance
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KDS120 Overview

0.1 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE

KDS120 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerKEC
package instructionUSM, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
Low Forward Voltage
Fast Reverse Recovery Time
Small Total Capacitance
KDS120
SILICON EPITAXIAL TYPE DIODE
E
: USM.
: V
F
=0.92V (Typ.).
A
M
B
M
D
3
DIM
A
B
C
D
E
G
H
J
K
: t
rr
=1.6ns(Typ.).
: C
T
=2.2pF (Typ.).
2
1
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
0.42 + 0.10
0.10 MIN
J
G
C
L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
85
80
300 *
100 *
2*
100
150
-55½150
UNIT
V
V
mA
mA
A
mW
H
N
K
N
L
M
N
3
1. CATHODE 1
2. CATHODE 2
3. ANODE
2
1
USM
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
Marking
Lot No.
Type Name
A3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
TEST CONDITION
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0, f=1MHz
I
F
=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.92
-
2.2
1.6
MAX.
-
-
1.20
0.5
4.0
4.0
μ
A
pF
nS
V
UNIT
2008.9. 8
Revision No : 4
1/2

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