MV1632 datasheet, PDF - EEWORLD Datasheet

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MV1632: DescriptionVariable Capacitance Diode, 20pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size8KB，1 Pages; ManufacturerCobham PLC

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MV1632 Overview

Variable Capacitance Diode, 20pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2

MV1632 Parametric

Parameter Name	Attribute value
Maker	Cobham PLC
package instruction	GLASS PACKAGE-2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	20 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	10%
Minimum diode capacitance ratio	2
Nominal diode capacitance	20 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JEDEC-95 code	DO-7
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	250
Maximum repetitive peak reverse voltage	20 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Varactor Diode Classification	ABRUPT

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NOX

EMICONDUCTOR,

NC.

ABRUPT VARACTOR DIODES

MV1620 - MV1650

TYPE

NUMBER

MV1620

MV1622

MV1624

MV1626

MV1628

MV1630

MV1632

MV1634

MV1636

MV1638

MV1640

MV1642

MV1644

MV1646

MV1648

MV1650

DIODE CAPACITANCE

Vr = - 4 Vdc, f = 1 MHz

(pF)

MIN

NOM

MAX

6.1

6.8

7.5

7.4

8.2

9.0

10.0

11.0

10.8

12.0

13.2

13.5

15.0

16.5

16.2

18.0

19.8

18.0

20.0

22.0

19.8

22.0

24.2

24.3

27.0

29.7

33.0

36.3

35.1

39.0

42.9

42.3

47.0

51.7

50.4

56.0

61.6

61.2

68.0

74.8

73.8

82.0

90.2

90.0

100.0

110.0

Q, QUALITY FACTOR

Vr = - 4 Vdc

f = 50 MHz

MIN

300

250

200

150

TR, TUNING RATIO

C•2V / C•20V

f = 1 MHz

MIN

MAX

2.0

3.2

Package Style

DO-7

DC Power Dissipation

Min Reverse Breakdown Voltage

Max Reverse Current (I

)

Operating Temperature (Topr)

Storage Temperature (Tstg)

Junction Temperature

@ Ta = 25° C

@ Ir = 10 µA

@ 15 Vdc

400 mW

20 Vdc

0.1 µA Max

-65 to + 150° C

-65 to + 200° C

175° C

P.O. BOX 609 • ROCKPORT, MAINE 04856

• 207•236•6076

•

FAX 207•236•9558

-19-

MV1632 Related Products

	MV1632	MV1626	MV1622	MV1634	MV1644	MV1642
Description	Variable Capacitance Diode, 20pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2	Variable Capacitance Diode, 12pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2	Variable Capacitance Diode, 8.2pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2	Variable Capacitance Diode, 22pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2	Variable Capacitance Diode, 56pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2	Variable Capacitance Diode, 47pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
Maker	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC
package instruction	GLASS PACKAGE-2	GLASS PACKAGE-2	GLASS PACKAGE-2	GLASS PACKAGE-2	GLASS PACKAGE-2	GLASS PACKAGE-2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	20 V	20 V	20 V	20 V	20 V	20 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode Capacitance Tolerance	10%	10%	9.76%	10%	10%	10%
Minimum diode capacitance ratio	2	2	2	2	2	2
Nominal diode capacitance	20 pF	12 pF	8.2 pF	22 pF	56 pF	47 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JEDEC-95 code	DO-7	DO-7	DO-7	DO-7	DO-7	DO-7
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
minimum quality factor	250	300	300	250	150	200
Maximum repetitive peak reverse voltage	20 V	20 V	20 V	20 V	20 V	20 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Varactor Diode Classification	ABRUPT	ABRUPT	ABRUPT	ABRUPT	ABRUPT	ABRUPT

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