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Datasheet> All Categories > Discrete semiconductor> diode> MV1642
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MV1642

Description
Variable Capacitance Diode, 47pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size8KB，1 Pages
ManufacturerCobham PLC
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MV1642 Overview

Variable Capacitance Diode, 47pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2

MV1642 Parametric

Parameter NameAttribute value
MakerCobham PLC
package instructionGLASS PACKAGE-2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage20 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2
Nominal diode capacitance47 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor200
Maximum repetitive peak reverse voltage20 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT

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K
NOX
S
EMICONDUCTOR,
I
NC.
ABRUPT VARACTOR DIODES
MV1620 - MV1650
TYPE
NUMBER
MV1620
MV1622
MV1624
MV1626
MV1628
MV1630
MV1632
MV1634
MV1636
MV1638
MV1640
MV1642
MV1644
MV1646
MV1648
MV1650
C
T
DIODE CAPACITANCE
Vr = - 4 Vdc, f = 1 MHz
(pF)
MIN
NOM
MAX
6.1
6.8
7.5
7.4
8.2
9.0
9.0
10.0
11.0
10.8
12.0
13.2
13.5
15.0
16.5
16.2
18.0
19.8
18.0
20.0
22.0
19.8
22.0
24.2
24.3
27.0
29.7
29.7
33.0
36.3
35.1
39.0
42.9
42.3
47.0
51.7
50.4
56.0
61.6
61.2
68.0
74.8
73.8
82.0
90.2
90.0
100.0
110.0
Q, QUALITY FACTOR
Vr = - 4 Vdc
f = 50 MHz
MIN
300
300
300
300
250
250
250
250
200
200
200
200
150
150
150
150
TR, TUNING RATIO
C•2V / C•20V
f = 1 MHz
MIN
MAX
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
Package Style
DO-7
DC Power Dissipation
Min Reverse Breakdown Voltage
Max Reverse Current (I
R
)
Operating Temperature (Topr)
Storage Temperature (Tstg)
Junction Temperature
@ Ta = 25° C
@ Ir = 10 µA
@ 15 Vdc
400 mW
20 Vdc
0.1 µA Max
-65 to + 150° C
-65 to + 200° C
175° C
P.O. BOX 609 • ROCKPORT, MAINE 04856
• 207•236•6076
•
FAX 207•236•9558
-19-

MV1642 Related Products

MV1642 MV1626 MV1622 MV1634 MV1644 MV1632
Description Variable Capacitance Diode, 47pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 12pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 8.2pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 22pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 56pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Variable Capacitance Diode, 20pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
Maker Cobham PLC Cobham PLC Cobham PLC Cobham PLC Cobham PLC Cobham PLC
package instruction GLASS PACKAGE-2 GLASS PACKAGE-2 GLASS PACKAGE-2 GLASS PACKAGE-2 GLASS PACKAGE-2 GLASS PACKAGE-2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 20 V 20 V 20 V 20 V 20 V 20 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 10% 10% 9.76% 10% 10% 10%
Minimum diode capacitance ratio 2 2 2 2 2 2
Nominal diode capacitance 47 pF 12 pF 8.2 pF 22 pF 56 pF 20 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JEDEC-95 code DO-7 DO-7 DO-7 DO-7 DO-7 DO-7
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
minimum quality factor 200 300 300 250 150 250
Maximum repetitive peak reverse voltage 20 V 20 V 20 V 20 V 20 V 20 V
surface mount NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Varactor Diode Classification ABRUPT ABRUPT ABRUPT ABRUPT ABRUPT ABRUPT

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